| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRelayDimensions | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret | PanasonicPanasonic Corporation 松下松下电器 | Panasonic | ||
GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
FixedAttenuators(N,BNC,TNC) | HIROSEHirose Electric Company 广濑日本广濑电机株式会社 | HIROSE | ||
50ohmswidevarietiesstandardconnectors | HIROSEHirose Electric Company 广濑日本广濑电机株式会社 | HIROSE | ||
Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
CompressionStyleRingTongueTerminal | MOLEX4Molex Electronics Ltd. 莫仕公司MOLEX莫仕公司 | MOLEX4 | ||
CompressionStyleRingTongueTerminalfor4AWGWire,StudSize10,Plated | MOLEX4Molex Electronics Ltd. 莫仕公司MOLEX莫仕公司 | MOLEX4 | ||
CompressionStyleRingTongueTerminal | MOLEX4Molex Electronics Ltd. 莫仕公司MOLEX莫仕公司 | MOLEX4 |
详细参数
- 型号：
NDB410B
- 制造商：
FAIRCHILD
- 制造商全称：
Fairchild Semiconductor
- 功能描述：
N-Channel Enhancement Mode Field Effect Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/HA |
23+ |
TO-263 |
9500 |
专业优势供应 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
MOT/ON |
6000 |
面议 |
19 |
DIP/SMD |
询价 | ||
FSC |
1746+ |
TO263 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
MOT/ON |
23+ |
TO- |
10000 |
公司只做原装正品 |
询价 | ||
MOT/ON |
22+ |
TO- |
6000 |
十年配单,只做原装 |
询价 | ||
MOT/ON |
23+ |
TO- |
6000 |
原装正品，支持实单 |
询价 | ||
isc |
2024 |
D2PAK/TO-263 |
200 |
国产品牌isc,可替代原装 |
询价 | ||
MOT/ON |
22+ |
TO- |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
MOT/ON |
24+ |
TO- |
35400 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 |
相关规格书
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- NDD03N50Z
