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NAND256W3A0BZA6E中文资料PDF规格书

NAND256W3A0BZA6E
厂商型号

NAND256W3A0BZA6E

参数属性

NAND256W3A0BZA6E 封装/外壳为55-TFBGA;包装为托盘;类别为集成电路(IC) > 存储器;产品描述:IC FLSH 256MBIT PARALLEL 55VFBGA

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

文件大小

916.59 Kbytes

页面数量

57

生产厂商 STMicroelectronics
企业简称

STMICROELECTRONICS意法半导体

中文名称

意法半导体(ST)集团官网

原厂标识
数据手册

下载地址一下载地址二原厂数据手册到原厂下载

更新时间

2024-6-15 12:05:00

NAND256W3A0BZA6E规格书详情

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12µs (max)

– Sequential access: 50ns (min)

– Page program time: 200µs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

产品属性

  • 产品编号:

    NAND256W3A0BZA6E

  • 制造商:

    Micron Technology Inc.

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    闪存 - NAND

  • 存储容量:

    256Mb(32M x 8)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    50ns

  • 电压 - 供电:

    2.7V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    55-TFBGA

  • 供应商器件封装:

    55-VFBGA(8x10)

  • 描述:

    IC FLSH 256MBIT PARALLEL 55VFBGA

供应商 型号 品牌 批号 封装 库存 备注 价格
22+23+
原厂原包
24190
绝对原装正品现货,全新深圳原装进口现货
询价
ST
19+
BGA
11195
进口原装现货
询价
ST
2019
TSOP
55000
真实现货库存
询价
ST
2023+
TSOP
700000
柒号芯城跟原厂的距离只有0.07公分
询价
ST
2020+
TSOP
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
ST/意法
22+
TSOP
13021
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
ST/意法
23+
NA/
14
优势代理渠道,原装正品,可全系列订货开增值税票
询价
ST
23+
TSOP48
16900
正规渠道,只有原装!
询价
ST
2021+
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
ST
1923+
BGA
5896
原装进口现货库存专业工厂研究所配单供货
询价