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N64T1630C1B中文资料PDF规格书
N64T1630C1B规格书详情
Overview
The N64T1630C1B is an integrated memory
device containing a 64 Mbit Pseudo Static Random
Access Memory using a self-refresh DRAM array
organized as 4,194,304 words by 16 bits. It is
designed to be compatible in operation and
interface to standard 6T SRAMS. The device is
designed for low standby and operating current
and includes a power-down feature to
automatically enter standby mode.
Features
• Dual voltage rails for optimum power & performance
Vcc - 2.7V - 3.3V
Vccq - 2.7V to 3.3V
• Fast Cycle Times
TACC < 70 nS (60ns future)
TPACC < 25 nS
• Very low standby current
ISB < 170µA
• Very low operating current
Icc < 25mA
• PASR (Partial Array Self Refresh)
• TCR (Temperature Compensated Refresh)
产品属性
- 型号：
N64T1630C1B
- 制造商：
NANOAMP
- 制造商全称：
NANOAMP
- 功能描述：
64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M 】 16 Bits
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
23+ |
65480 |
询价 | ||||
3000 |
公司存货 |
询价 | |||||
RENESAS |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||||
FAIRCHILD |
6000 |
面议 |
19 |
DIP/SMD |
询价 | ||
WESTCODE |
18+ |
MODULE |
2050 |
公司大量全新原装 正品 随时可以发货 |
询价 | ||
HARRIS |
ROHS |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
ON-安森美 |
24+25+/26+27+ |
TO-263-3 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
RENESAS |
23+ |
TO220F |
3490 |
原厂原装正品 |
询价 | ||
FCS |
20+ |
TO-263 |
2400 |
现货很近!原厂很远!只做原装 |
询价 | ||
FCS |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 |
