零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-Channel200V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
DualN-Channel25-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
DualN-ChannelEnhancementModeMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
N-CHANNELMOSFETinaTO-252PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
200VN-ChannelMOSFET 200VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
200VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •3.8A,200V,RDS(on)=1.2Ω@VGS=10V •Lowgatecharge(typical4.8nC) •LowCrss(typical6.0pF) •Fast | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelQFETMOSFET200V,3.8A,1.2 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET 200VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET Features •3.5A,200V,RDS(on)=1.2Ω@VGS=10V •Lowgatecharge(typical6.0nC) •LowCrss(typical6.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MIT |
CDIP-28 |
1 |
询价 | ||||
APEC/富鼎 |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
APEC/富鼎 |
2022 |
SOT-23 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
APEC/富鼎 |
23+ |
NA/ |
3270 |
原装现货,当天可交货,原型号开票 |
询价 | ||
MITSUBISHI |
6000 |
面议 |
19 |
DIP/SMD |
询价 | ||
MITSUBISHI |
22+ |
SOP |
4897 |
绝对原装!现货热卖! |
询价 | ||
N/A |
2017+ |
24896 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | |||
N/A |
N/A |
10000 |
询价 | ||||
NO |
23+ |
-3 |
1222 |
优势库存 |
询价 | ||
N/A |
DIP-18 |
35560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |
相关规格书
更多- N700053B
- N710020CFMBFGA
- N74ALS245AD
- N74F02D
- N74F06D
- N74F08D
- N74F11D
- N74F138D
- N74F157AD
- N74F174D
- N74F245D
- N74F32D
- N74F374D
- N74F74D
- N80186
- N80188-10
- N80286-12
- N8031AH
- N8042AH
- N80930AD2
- N80930HF0
- N80960SA10
- N80960SA-16
- N8096BH
- N8097BH
- N80C152JB
- N80C186
- N80C186-16
- N80C186-25
- N80C186XL12
- N80C186XL16
- N80C186XL25
- N80C188-12
- N80C188-20
- N80C188XL12
- N80C188XL20
- N80C196KB
- N80C196KB16
- N80C196KC
- N80C196KC18
- N80C196KC-20
- N80C196MC
- N80C198
- N80C251SB16
- N80C31BH
相关库存
更多- N710008CFMR000
- N710021CFMBFGA
- N74F00D
- N74F04D
- N74F07D
- N74F10D
- N74F125D
- N74F14D
- N74F164D
- N74F244D
- N74F257AD
- N74F373D
- N74F38D
- N74F86D
- N80188
- N80286-10
- N80286-8
- N8032AH
- N8052AH
- N80930AD4
- N80931AA2
- N80960SA16
- N80960SA20
- N8097-90
- N80C152JA
- N80C152JC
- N80C186-12
- N80C186-20
- N80C186XL10
- N80C186XL-12
- N80C186XL20
- N80C188
- N80C188-16
- N80C188XL10
- N80C188XL16
- N80C188XL25
- N80C196KB12
- N80C196KB-16
- N80C196KC16
- N80C196KC20
- N80C196KR
- N80C196NT
- N80C198-16
- N80C286-12
- N80C31BH1