首页 >MUR6040PT>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

MUR6040PT

GLASS PASSIVATED SUPER FAST RECTIFIER

FEATURES PlasticMaterialhasULFlammability Classification94V-O LowPowerloss,HighEfficiency LowReverseLeakageCurrent SuperFastSwitching,HighEfficiency HighSurgeCurrentCapability FredChipPlanarConstruction

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

MUR6040PT

60.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ThinkiSemilatest&maturedprocessFRD ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerSupply

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

MUR6040PT

Ultra Fast Recovery Diodes

FEATURES *InternationalstandardpackageJEDECTO-247AD *Planarpassivatedchips *Veryshortrecoverytime *Extremelylowswitchinglosses *LowIRM-values *Softrecoverybehaviour APPLICATIONS *Rectifiersinswitchmodepowersupplies(SMPS) *Uninterruptiblepo

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

MUR6040PT

Ultra Fast Recovery Diodes

FEATURES *InternationalstandardpackageJEDECTO-247AD *Planarpassivatedchips *Veryshortrecoverytime *Extremelylowswitchinglosses *LowIRM-values *Softrecoverybehaviour APPLICATIONS *Rectifiersinswitchmodepowersupplies(SMPS) *Uninterruptiblepo

SIRECTSirectifier Global Corp.

矽莱克半导体矽莱克半导体有限公司(深圳)

MUR6040PT

Rectifiers in switch mode power supplies (SMPS)

FEATURES *InternationalstandardpackageJEDECTO-247AD *Planarpassivatedchips *Veryshortrecoverytime *Extremelylowswitchinglosses *LowIRM-values *Softrecoverybehaviour APPLICATIONS *Rectifiersinswitchmodepowersupplies(SMPS) *Uninterruptiblepo

KERSEMI

Kersemi Electronic Co., Ltd.

MUR6040PT

Ultrafast Rectifier

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MUR6040PT

Ultra Fast Recovery Diodes

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

MUR6040PT

ULTRA FAST RECOVERY RECTIFIERS

NIUHANG

Dongguan City Niuhang Electronics Co.LTD

MUR6040PT_16

Ultra Fast Recovery Diodes

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

MUR6040PTR

60 Amperes HeatSink Dual Common Anode Ultra Fast Recovery Rectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

APT6040

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT6040AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT6040BN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT6040BN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT6040BNR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT6040BVFR

POWERMOSVFREDFET

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT6040BVFRG

POWERMOSVFREDFET

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT6040BVR

POWERMOSV

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

ADPOW

Advanced Power Technology

APT6040BVR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT6040HN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    MUR6040PT

  • 制造商:

    SIRECTIFIER

  • 制造商全称:

    Sirectifier Semiconductors

  • 功能描述:

    快速恢复二极管Fast Recovery Diodes,超快恢复二极管Ultra Fast Recovery Diodes,Tj = -40°C ~ 125°C, Tjm = 125°C。

供应商型号品牌批号封装库存备注价格
扬杰
23+
TO-247
3500
公司现货库存,有挂就有货,支持实单
询价
ON/安森美
23+
TO-247
10000
公司只做原装正品
询价
ON(安森美)
6000
询价
ON/安森美
22+
TO-247
6000
十年配单,只做原装
询价
GS
TO-3P
68900
原包原标签100%进口原装常备现货!
询价
ON/安森美
23+
TO-247
6000
原装正品,支持实单
询价
ON(安森美)
22+
NA
8000
原厂原装现货
询价
ON(安森美)
23+
NA
8000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
isc
2024
TO-3PN
9000
国产品牌isc,可替代原装
询价
ON(安森美)
标准封装
8000
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
更多MUR6040PT供应商 更新时间2024-6-9 13:30:00