MTP55N06中文资料PDF规格书
MTP55N06规格书详情
TMOS E-FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated Temperature
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Low Stored Gate Charge for Efficient Switching
• Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor–Absorbs High Energy in the
Avalanche Mode
• ESD Protected. Designed to Typically Withstand 400 V
Machine Model and 4000 V Human Body Model.
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
TO-220 |
6893 |
询价 | |||
ON/安森美 |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
CYSTECH/全宇昕 |
TSOP-6 |
90000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
VB |
TO220 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
MOT |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
N/A |
2000 |
询价 | |||||
ON |
1746+ |
TO220 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
MOT/ON |
23+ |
TO-TO-220 |
37650 |
全新原装真实库存含13点增值税票! |
询价 | ||
MOT/ON |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
MOT/ON |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 |