MTP30P06V中文资料PDF规格书
MTP30P06V规格书详情
TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM
P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt TMOS devices. Just as with our TMOSE–FET designs,TMOSV is designed to with stand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. New Features of TMOS V
• On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on)Technology
• Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS
• Avalanche Energy Specified
• IDSSand VDS(on)Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E–FET
产品属性
- 型号:
MTP30P06V
- 制造商:
MOTOROLA
- 制造商全称:
Motorola, Inc
- 功能描述:
TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
TO-220 |
265209 |
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询价 | |||
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2021+ |
TO-220 |
100500 |
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ON/安森美 |
23+ |
TO-220 |
50000 |
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询价 | ||
ON |
23+ |
TO-TO-220 |
33500 |
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询价 | ||
O |
23+ |
TO220AB |
6000 |
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询价 | ||
ON/安森美 |
22+ |
TO-220 |
12800 |
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询价 | ||
ON |
2023+ |
TO-220 |
16800 |
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询价 | ||
ON |
20+ |
TO-220 |
90000 |
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询价 | ||
VBsemi/台湾微碧 |
TO |
8449 |
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询价 | |||
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21+ |
TO-220 |
8445 |
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询价 |