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MTD15N06VL规格书详情
TMOS V Power Field Effect Transistor DPAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
New Features of TMOS V
• On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E–FET
• Surface Mount Package Available in 16 mm 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
产品属性
- 型号:
MTD15N06VL
- 制造商:
ON Semiconductor
- 功能描述:
MOSFET N LOGIC D-PAK
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
23+ |
N/A |
90650 |
正品授权货源可靠 |
询价 | |||
ON |
21+ |
TO-252 |
35200 |
一级代理/放心采购 |
询价 | ||
ON/安森美 |
TO-252 |
15238 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
ON/安森美 |
2022+ |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | |||
ON/安森美 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VB |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ONSEMICONDUC |
05+ |
原厂原装 |
1344 |
只做全新原装真实现货供应 |
询价 | ||
MOT |
1845+ |
TO252 |
5790 |
只做原装!量大可以订货!特价支持实单! |
询价 | ||
ON |
1709+ |
TO-252/D-PAK |
32500 |
普通 |
询价 |