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MTB60N06

TMOS POWER FET 60 AMPERES 60 VOLTS

HDTMOSE-FET™HighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswit

MotorolaMotorola, Inc

摩托罗拉

MTB60N06HD

TMOS POWER FET 60 AMPERES 60 VOLTS

HDTMOSE-FET™HighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswit

MotorolaMotorola, Inc

摩托罗拉

MTB60N06J3

N -Channel Enhancement Mode Power MOSFET

Features •LowGateCharge •SimpleDriveRequirement •RoHScompliant&Halogen-freepackage

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTB60N06L3

N -Channel Enhancement Mode Power MOSFET

Features •LowGateCharge •SimpleDriveRequirement •RoHScompliant&Halogen-freepackage

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTB60N06HD

N?묬hannel Power MOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTB60N06HDT4

N?묬hannel Power MOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTB60N06HDT4

N-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

60N06

60Amps,60VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC60N06isN-channelenhancementmodepowerfieldeffecttransistorswithstableoff-statecharacteristics,fastswitchingspeed,lowthermalresistance,usuallyusedattelecomandcomputerapplication. FEATURES *RDS(ON)≤18mΩ@VGS=10V,ID=30A *Ultralowgatecharge(ty

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

60N06

60A,60VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

60N06

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

60N06

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

60N06FI

N-Channel60-V(D-S)MOSFET

FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET •Materialcategorization:

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

CEB60N06G

N-ChannelEnhancementModeFieldEffectTransistor

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEB60N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,60A,RDS(ON)=16mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP60N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,60A,RDS(ON)=16mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP60N06G

N-ChannelEnhancementModeFieldEffectTransistor

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CMT60N06

N-CHANNELLogicLevelPOWERMOSFET

ETCList of Unclassifed Manufacturers

未分类制造商

CMT60N06G

N-CHANNELLogicLevelPowerMOSFET

CHAMPChampion Microelectronic Corp.

虹冠虹冠电子

EMB60N06A

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)60mΩ ID12A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB60N06A

N-Channel60V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •Materialcategorization: Fordefinitionsofcompliancepleasesee APPLICATIONS •DC/DCConverters •DC/ACInverters •MotorDrives

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

详细参数

  • 型号:

    MTB60N06

  • 制造商:

    MOTOROLA

  • 制造商全称:

    Motorola, Inc

  • 功能描述:

    TMOS POWER FET 60 AMPERES 60 VOLTS

供应商型号品牌批号封装库存备注价格
ON/安森美
2024+实力库存
TO-263
2500
只做原厂渠道 可追溯货源
询价
ON
23+
TO-263
6893
询价
ON
2017+
TO-263
26589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
ON
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
23+
N/A
85400
正品授权货源可靠
询价
ON
20+
TO-263
90000
原装正品现货/价格优势
询价
ON
2023+
TO-263
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
ON
21+
TO-263
35200
一级代理/放心采购
询价
SAMHOP/三合微科
23+
SOP-8
69820
终端可以免费供样,支持BOM配单!
询价
ON
08+
TO-263
2500
普通
询价
更多MTB60N06供应商 更新时间2024-5-7 16:36:00