MT48LC16M16A2

SYNCHRONOUS DRAM

GeneralDescription The256MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s67,108,864-

MT48LC16M16A2

256Mb: x4, x8, x16 SDRAM

MT48LC16M16A2

SDR SDRAM

MT48LC16M16A2

SYNCHRONOUS DRAM 256Mb: x4, x8, x16 SDRAM

MT48LC16M16A2

Synchronous DRAM 256Mb: x4, x8, x16 SDRAM

MT48LC16M16A2BG

SDR SDRAM

MT48LC16M16A2FG

SDR SDRAM

MT48LC16M16A2P

SDR SDRAM

MT48LC16M16A2P-75DTR

SDR SDRAM MT48LC64M4A2 ??16 Meg x 4 x 4 banks MT48LC32M8A2 ??8 Meg x 8 x 4 banks MT48LC16M16A2 ??4 Meg x 16 x 4 banks

MT48LC16M16A2TG

SDR SDRAM

MT48LC16M16A2TG-75ITD

256Mb: x4, x8, x16 SDRAM

MT48LC16M16A2B4-6A AAT:G TR

包装：散装 封装/外壳：54-VFBGA 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PARALLEL 54VFBGA

MT48LC16M16A2B4-6A AIT:G

包装：托盘 封装/外壳：54-VFBGA 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PARALLEL 54VFBGA

MT48LC16M16A2B4-6A AIT:G TR

包装：散装 封装/外壳：54-VFBGA 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PARALLEL 54VFBGA