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MT46V64M8TG-75集成电路(IC)存储器规格书PDF中文资料
厂商型号 |
MT46V64M8TG-75 |
参数属性 | MT46V64M8TG-75 封装/外壳为66-TSSOP(szerokość 0,400",10,16mm);包装为托盘;类别为集成电路(IC) > 存储器;产品描述:IC DRAM 512MBIT PARALLEL 66TSOP |
功能描述 | DOUBLE DATA RATE DDR SDRAM |
文件大小 |
2.55598 Mbytes |
页面数量 |
68 页 |
生产厂商 | Micron Technology Inc. |
企业简称 |
Micron【镁光】 |
中文名称 | 美国镁光科技有限公司官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-6-7 18:01:00 |
MT46V64M8TG-75规格书详情
Functional Description
The DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR SDRAM effectively consists of a single 2n-bit-wide, one-clockcycle data transfer at the internal DRAM core and two corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins.
Features
• VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
• VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V (DDR400)
• Bidirectional data strobe (DQS) transmitted/
received with data, i.e., source-synchronous data
capture (x16 has two – one per byte)
• Internal, pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data
(x16 has two – one per byte)
• Programmable burst lengths: 2, 4, or 8
• Auto refresh
– 64ms, 8192-cycle(Commercial and industrial)
– 16ms, 8192-cycle (Automotive)
• Self refresh (not available on AT devices)
• Longer-lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2 compatible)
• Concurrent auto precharge option is supported
• tRAS lockout supported (tRAP = tRCD)
MT46V64M8TG-75属于集成电路(IC) > 存储器。美国镁光科技有限公司制造生产的MT46V64M8TG-75存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。
产品属性
- 产品编号:
MT46V64M8TG-75 IT
- 制造商:
Micron Technology Inc.
- 类别:
集成电路(IC) > 存储器
- 包装:
托盘
- 存储器类型:
易失
- 存储器格式:
DRAM
- 技术:
SDRAM - DDR
- 存储容量:
512Mb(64M x 8)
- 存储器接口:
并联
- 写周期时间 - 字,页:
15ns
- 电压 - 供电:
2.3V ~ 2.7V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
66-TSSOP(szerokość 0,400",10,16mm)
- 供应商器件封装:
66-TSOP
- 描述:
IC DRAM 512MBIT PARALLEL 66TSOP
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MICRON |
21+ |
TSOP |
35200 |
一级代理/放心采购 |
询价 | ||
Micron |
23+ |
66TSOP |
9000 |
原装正品,支持实单 |
询价 | ||
MICRON |
21+ |
BGA/TSOP |
50000 |
特价来袭!美光一级代理入驻114电子网 |
询价 | ||
MicronTechnologyInc |
2022 |
ICDDRSDRAM512MBIT66TSOP |
5058 |
原厂原装正品,价格超越代理 |
询价 | ||
Micron |
22+ |
66TSOP |
9000 |
原厂渠道,现货配单 |
询价 | ||
Micron |
23+ |
66TSOP |
28500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
询价 | ||
Micron |
23+ |
66TSOP |
8000 |
只做原装现货 |
询价 | ||
Micron |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Micron Technology Inc. |
24+ |
66-TSSOP (szeroko?? 0,400,10 |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 | ||
MICRON |
20+ |
TSOP |
8800 |
只做原装正品 |
询价 |