首页 >MSD2312TXVB>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MSD2312TXVB | 200 4-CHARACTER 5X7 DOT MATRIX SERIAL INPUT ALPHANUMERIC MILITARY DISPLAY | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | |
BandpassFilter | KRKR Electronics, Inc. KR Electronics, Inc. | KR | ||
Pneumaticmuffler | FESTOFesto Corporation. 费斯托公司德国FESTO费斯托（中国）有限公司 | FESTO | ||
NylonHoseClamps | HeycoHeyco. 海科海科(Heyco) | Heyco | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductorsHorizontalorverticalmount | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
HighCurrentToroidInductors | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
PhotoelectronicSmokedetectorwithElectronicHeatSensing | SYSTEMSENSORSystemsensor advanced ideas. Systemsensor advanced ideas. | SYSTEMSENSOR | ||
MOSFET20VN-CHANNELENHANCEMENTMODE DESCRIPTION TheAM2312isavailableinSOT-23Spackage. FEATURES VDS=20V RDS(ON),VGS@4.5V,IDS@5.0A=41mΩ RDS(ON),VGS@2.5V,IDS@4.5A=47mΩ Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance Capableof2.5Vgatedrive Loweron-resistanc | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
N-Channel20-V(D-S)MOSFET | AnalogPower Analog Power | AnalogPower | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | A-POWER | ||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
Plastic-EncapsulateMOSFETS FEATURE TrenchFETPowerMOSFET APPLICATION DC/DCConverters LoadSwitchingforPortableApplications | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | GWSEMI | ||
N-ChannelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 | Belling | ||
N-Channel20V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,4.5A,RDS(ON)=33mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET |
详细参数
- 型号：
MSD2312TXVB
- 制造商：
INFINEON
- 制造商全称：
Infineon Technologies AG
- 功能描述：
200 4-CHARACTER 5X7 DOT MATRIX SERIAL INPUT ALPHANUMERIC MILITARY DISPLAY
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MSTAR |
24+ |
LQFP256 |
5000 |
只做原装公司现货 |
询价 | ||
MSTAR |
1948+ |
LQFP256 |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
MSTAR |
2020+ |
QFP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
MSTAR/晨星半导体 |
LQFP256 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
MSTAR |
22+ |
QFP |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 | ||
MSTAR/晨星半导体 |
23+ |
QFP |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
MSTAR/晨星半导体 |
2022 |
QFP |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
MStar/Master Appliance Corp. |
21+ |
QFP |
9 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
MSTAR/晨星半导体 |
TQFP256 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
MSTAR |
21+ |
QFP |
12800 |
只有原装 ,可支持实单 |
询价 |
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