Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

• Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA,

Pout = 120 Watts Peak (24 Watts Avg.), Pulsed Signal, f = 3500 MHz,

Pulse Width = 100 μsec, Duty Cycle = 20

Power Gain — 12 dB

Drain Efficiency — 40

Rise Time — 6 ns

Fall Time — 6 ns

• Typical WiMAX Performance: VDD = 32 Volts, IDQ = 900 mA,

Pout = 18 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 Bursts,

7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01

Probability on CCDF

Power Gain — 13 dB

Drain Efficiency — 16

RCE — --33 dB (EVM — 2.2 rms)

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 120 Watts Peak

Power

• Capable of Handling 3 dB Overdrive @ 32 Vdc

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MRF7S35120HS属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。恩智浦半导体公司制造生产的MRF7S35120HS晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。