1.8--150 MHz, 1000 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs

Designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

• Typical Pulse Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20

Power Gain — 26 dB

Drain Efficiency — 71

• Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak Power

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• CW Operation Capability with Adequate Cooling

• Qualified Up to a Maximum of 50 VDD Operation

• Integrated ESD Protection

• Designed for Push--Pull Operation

• Greater Negative Gate--Source Voltage Range for Improved Class C Operation

• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 Inch Reel.