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MRF6S9060MBR1中文资料PDF规格书
厂商型号 |
MRF6S9060MBR1 |
参数属性 | MRF6S9060MBR1 封装/外壳为TO-272-2;包装为卷带(TR);类别为分立半导体产品 > 晶体管 - FET,MOSFET - 射频;产品描述:FET RF 68V 880MHZ TO-272-2 |
功能描述 | RF Power Field Effect Transistors |
文件大小 |
630.01 Kbytes |
页面数量 |
16 页 |
生产厂商 | Freescaleiscreatingasmarter |
企业简称 |
freescale【飞思卡尔】 |
中文名称 | 飞思卡尔官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-6-5 17:18:00 |
MRF6S9060MBR1规格书详情
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.
• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01 Probability on CCDF.
Power Gain — 21.4 dB
Drain Efficiency — 32.1
ACPR @ 750 kHz Offset — -47.6 dBc @ 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (921-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 1.5 rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (921-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 63
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Integrated ESD Protection
• N Suffix Indicates Lead-Free Terminations
• 200°C Capable Plastic Package
• TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
• TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
产品属性
- 产品编号:
MRF6S9060MBR1
- 制造商:
NXP USA Inc.
- 类别:
分立半导体产品 > 晶体管 - FET,MOSFET - 射频
- 包装:
卷带(TR)
- 晶体管类型:
LDMOS
- 频率:
880MHz
- 增益:
21.4dB
- 功率 - 输出:
14W
- 封装/外壳:
TO-272-2
- 供应商器件封装:
TO-272-2
- 描述:
FET RF 68V 880MHZ TO-272-2
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FREESCALE |
23+ |
SMD |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
FREESCALE |
2018+ |
SMD |
1680 |
FREESCALE专营品牌进口原装现货假一赔十 |
询价 | ||
freescale/Freescaleiscreatinga |
21+ |
SMD |
510 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
FSL |
2022 |
SMD |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
FREESCALE |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
FSL |
SMD |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
MOTOROLA |
22+ |
SMD |
2789 |
全新原装自家现货!价格优势! |
询价 | ||
FREESCALE |
05+33 |
14 |
公司优势库存 热卖中! |
询价 | |||
NXP-恩智浦 |
24+25+/26+27+ |
TO-59.高频管 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
FREESCALE/飞思卡尔 |
2402+ |
High-frequency |
8324 |
原装正品!实单价优! |
询价 |