RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.

• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 26 Volts,

IDQ = 950 mA, Pout = 20 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01 Probability on CCDF.

Power Gain — 19.5 dB

Drain Efficiency — 28

ACPR @ 750 kHz Offset — -46.8 dBc in 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• 200°C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.