The RF MOSFET Line

RF Power

Field-Effect Transistors

N-Channel Enhancement-mode

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

• Guaranteed Performance

MRF175GV @ 28 V, 225 MHz (“V” Suffix)

Output Power — 200 Watts

Power Gain — 14 dB Typ

Efficiency — 65 Typ

MRF175GU @ 28 V, 400 MHz (“U” Suffix)

Output Power — 150 Watts

Power Gain — 12 dB Typ

Efficiency — 55 Typ

• 100 Ruggedness Tested At Rated Output Power

• Low Thermal Resistance

• Low Crss — 20 pF Typ @ VDS = 28 V

MRF175GU属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。Tyco Electronics制造生产的MRF175GU晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。