| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MRF | Fast Acting Radial Lead Micro Fuse Series FastActingRadialLeadMicroFuseSeries | bel Bel Fuse Inc. | bel | |
MRF | 包装：盒 类别：RF/IF，射频/中频和 RFID RF 其它 IC 和模块 描述：L3 PRODUCT | L3 Narda-MITEQ L3 Narda-MITEQ | L3 Narda-MITEQ | |
Fast Acting Radial Lead Micro Fuse Series FastActingRadialLeadMicroFuseSeries | bel Bel Fuse Inc. | bel | ||
Fast Acting Radial Lead Micro Fuse Series FastActingRadialLeadMicroFuseSeries | bel Bel Fuse Inc. | bel | ||
Fast Acting Radial Lead Micro Fuse Series FastActingRadialLeadMicroFuseSeries | bel Bel Fuse Inc. | bel | ||
Fast Acting Radial Lead Micro Fuse Series FastActingRadialLeadMicroFuseSeries | bel Bel Fuse Inc. | bel | ||
MICROWAVE POWER TRANSISTOR TheRFLineMicrowavePowerTransistor ...designedforCWandlongpulsedcommonbaseamplifierapplications,suchasJTIDSandModeS,inthe0.96to1.215GHzfrequencyrangeathighoveralldutycycles. •GuaranteedPerformance@1.215GHz,28Vdc OutputPower=5.0WattsCW | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
The RF Line Microwave Power Transistor ...designedforCWandlongpulsedcommonbaseamplifierapplications,suchasJTIDSandModeS,inthe0.96to1.215GHzfrequencyrangeathighoveralldutycycles. •GuaranteedPerformance@1.215GHz,28Vdc OutputPower=5.0WattsCW MinimumGain=8.5dB,10.3dB(Typ) •RFP | MACOM Tyco Electronics | MACOM | ||
Microwave Power Silicon Bipolar Transistor 5.0 W, 960-1215 MHz, 28V DescriptionandApplications DesignedforCWandlong-pulsedcommonbaseamplifierapplications,suchasJTIDSandModeS,inthe0.96to1.215GHzfrequencyrangewithhighoveralldutycycles. Features •Guaranteedperformance@1.215GHz,28Vdc •Outputpower:5.0WCW •Minimumgain=8.5dB, | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM | ||
Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960-1215 MHz, 18V DescriptionandApplications DesignedforClassAandABcommonemitteramplifierapplicationsinthelow–powerstagesofIFF,DME,TACAN,radartransmitters,andCWsystems. Features •Guaranteedperformance@1090MHz,18Vdc—ClassA •Outputpower:0.2W •Minimumgain:10dB •100tested | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF1000MBisDesignedforClassA,DME/TACANApplicationsupto1090MHz. FEATURES: •ClassAOperation •PG=10dBat0.2W/1090MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | ASI | ||
MICROWAVE POWER TRANSISTORS NPN SILICON DesignedforClassAandABcommonemitteramplifierapplicationsinthelow–powerstagesofIFF,DME,TACAN,radartransmitters,andCWsystems. •GuaranteedPerformance@1090MHz,18Vdc—ClassA OutputPower=0.2Watt MinimumGain=10dB •100TestedforLoadMismatchatAllPha | MACOM Tyco Electronics | MACOM | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: SiliconNPNtransistor,designedforVHFandUHFequipment.Applicationsincludeamplifier;pre-driver,driver,andoutputstages.Alsosuitableforoscillatorandfrequency-multiplierfunctions. Features •SiliconNPN,To-39packagedVHF/UHFTransistor •Ftau=3.0Ghz(typ)@30 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: SiliconNPNtransistor,designedforVHFandUHFequipment.Applicationsincludeamplifier;pre-driver,driver,andoutputstages.Alsosuitableforoscillatorandfrequency-multiplierfunctions. Features •SiliconNPN,To-39packagedVHF/UHFTransistor •Ftau=3.0Ghz(typ)@30 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: TheASIMRF1001AisaHighFrequencyTransistorDesignedforAmplifierandOscillatorApplications. | ASI Advanced Semiconductor, Inc | ASI | ||
ELECTRICAL SPECIFICATIONS (Tease - 25째C) ELECTRICALSPECIFICATIONS(Tease-25°C) | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
MICROWAVE POWER TRANSISTORS TheRFLine MicrowavepulsePowerTransistors ...designedforClassBandCcommonbaseamplifierapplicationsinshortandlongpulseTACAN,IFF,DME,andradartransmitters. •GuaranteedPerformance@1090MHz,35Vdc OutputPower=2.0WattsPeak MinimumGain=10dB •100Tested | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
MICROWAVE POWER TRANSISTORS TheRFLine MicrowavepulsePowerTransistors ...designedforClassBandCcommonbaseamplifierapplicationsinshortandlongpulseTACAN,IFF,DME,andradartransmitters. •GuaranteedPerformance@1090MHz,35Vdc OutputPower=2.0WattsPeak MinimumGain=10dB •100Tested | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
MICROWAVE POWER TRANSISTORS TheRFLine MicrowavepulsePowerTransistors ...designedforClassBandCcommonbaseamplifierapplicationsinshortandlongpulseTACAN,IFF,DME,andradartransmitters. •GuaranteedPerformance@1090MHz,35Vdc OutputPower=2.0WattsPeak MinimumGain=10dB •100Tested | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF1002MBisDesignedforClassC,DME/TACANApplicationsupto1150MHz. FEATURES: •ClassCOperation •PG=9.0dBat2.0W/1150MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | ASI |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
甚高频 （VHF）_TR
- 封装形式：
直插封装
- 极限工作电压：
36V
- 最大电流允许值：
0.4A
- 最大工作频率：
220MHZ
- 引脚数：
3
- 可代换的型号：
BFR36,BLW11,3DA21A,
- 最大耗散功率：
1W
- 放大倍数：
- 图片代号：
C-40
- vtest：
36
- htest：
220000000
- atest：
.4
- wtest：
1
产品属性
- 产品编号：
MRF
- 制造商：
L3 Narda-MITEQ
- 类别：
RF/IF，射频/中频和 RFID > RF 其它 IC 和模块
- 包装：
盒
- 描述：
L3 PRODUCT
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BEL |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
MOTOROLA |
23+ |
TSSOP |
20000 |
全新原装假一赔十 |
询价 | ||
TI(德州仪器) |
23+ |
NA |
20094 |
原装正品 可支持验货，欢迎咨询 |
询价 | ||
FREESCALE |
21+ |
高频管 |
9866 |
询价 | |||
MOT |
2023+ |
??? |
9600 |
进口原装现货 |
询价 | ||
3+ |
CAN |
500 |
询价 | ||||
FREESCALE |
23+ |
TO270-2 |
710 |
正规渠道,只有原装! |
询价 | ||
NXP/恩智浦 |
21+ |
NI-1230H-4 |
28680 |
面议/来电确定 |
询价 | ||
FREESCALE |
23+ |
TO-270-2 |
20000 |
原装正品 欢迎咨询 |
询价 | ||
ADI |
22+ |
N/A |
60000 |
专注配单,只做原装现货 |
询价 |
