DESCRIPTION

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through-the-board mounting.

FEATURES

• UL Recognized (File #E90700, volume 2)

• VDE Recognized (File #136616) (add option ‘V’ for VDE approval, e.g., MOC211V-M)

• Convenient Plastic SOIC-8 Surface Mountable Package Style

• Standard SOIC-8 Footprint, with 0.050 Lead Spacing

• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering

• High Input-Output Isolation of 2500 VAC(rms) Guaranteed

• Minimum BVCEO of 30V guaranteed

APPLICATIONS

• General Purpose Switching Circuits

• Interfacing and coupling systems of different potentials and impedances

• Regulation Feedback Circuits

• Monitor and Detection Circuits