零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
MMG | METALLIZED POLYESTER FILM CAPACITORS | RubyconRubycon Corporation 红宝石RUBYCON株式会社 | Rubycon | |
POWERLUX IGBT ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. •Built–InFreeWheelingDiode •Built–InGateProtectionZenerDiode •IndustryStandardPackage(SOT223) •HighSpeedEoff:Typic | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
Gallium Arsenide CATV Integrated Amplifier Module Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi | freescaleFreescaleiscreatingasmarter 飞思卡尔 | freescale | ||
Gallium Arsenide CATV Integrated Amplifier Module Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
Gallium Arsenide CATV Integrated Amplifier Module Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
Gallium Arsenide CATV Integrated Amplifier Module Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi | freescaleFreescaleiscreatingasmarter 飞思卡尔 | freescale | ||
Gallium Arsenide CATV Integrated Amplifier Module Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi | freescaleFreescaleiscreatingasmarter 飞思卡尔 | freescale | ||
650V 100A Three Level Inverter Module PRODUCTFEATURES □Temperaturesenseincluded □Freewheelingdiodeswithfastandsoftreverserecovery □650VIGBTCHIP(Trench+FieldStoptechnology) □Lowswitchinglossesandshorttailcurrent □Lowsaturationvoltageandpositivetemperaturecoefficient APPLICATIONS □SolarApplicat | MACMICMacMic 宏微宏微科技有限公司 | MACMIC | ||
GALLIUM ARSENIDE CATV INTEGRATED AMPLIFIER MODULE Description •24VdcSupply,40to870MHz,CATVIntegratedForwardPowerDoublerAmplifierModule Features •Specifiedfor79–,112–and132–ChannelLoading •ExcellentDistortionPerformance •HigherOutputCapability •Built–inInputDiodeProtection •GaAsFETTransistorTechnology •U | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
Gallium Arsenide CATV Integrated Amplifier Module Description •24VdcSupply,40to870MHz,CATVIntegratedForwardPowerDoublerAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •HigherOutputCapability •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •U | freescaleFreescaleiscreatingasmarter 飞思卡尔 | freescale | ||
Indium Gallium Phosphorus HBT IndiumGalliumPhosphorusHBT WLANPowerAmplifier Designedfor802.11ganddualmodeapplicationswithfrequenciesfrom2400to2500MHz. •26.5dBmP1dB@2450MHz •PowerGain:27.5dBTyp(@f=2450MHz,ClassAB) •HighGain,HighEfficiencyandHighLinearity •EVM=3Typ@Pout=+1 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
Indium Gallium Phosphorus HBT - WLAN Power Amplifier IndiumGalliumPhosphorusHBT WLANPowerAmplifier Designedfor802.11ganddualmodeapplicationswithfrequenciesfrom2400to2500MHz. Designedfor802.11ganddualmodeapplicationswithfrequenciesfrom2400to2500MHz. •26.5dBmP1dB@2450MHz •PowerGain:27.5dBTyp(@f=2450M | freescaleFreescaleiscreatingasmarter 飞思卡尔 | freescale | ||
Indium Gallium Phosphorus HBT IndiumGalliumPhosphorusHBT WLANPowerAmplifier Designedfor802.11ganddualmodeapplicationswithfrequenciesfrom2400to2500MHz. •26.5dBmP1dB@2450MHz •PowerGain:27.5dBTyp(@f=2450MHz,ClassAB) •HighGain,HighEfficiencyandHighLinearity •EVM=3Typ@Pout=+1 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
1200V 25A Six-Pack Module PRODUCTFEATURES □SolderContactTechnology,Ruggedmountingduetointegrated Mountingclamps □Temperaturesenseincluded □Freewheelingdiodeswithfastandsoftreverserecovery □SubstrateforLowThermalResistance □Lowsaturationvoltageandpositivetemperaturecoefficient □Fast | MACMICMacMic 宏微宏微科技有限公司 | MACMIC | ||
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3001NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itis | freescaleFreescaleiscreatingasmarter 飞思卡尔 | freescale | ||
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3001NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
Heterojunction Bipolar Transistor Technology (InGaP HBT) 40-3600MHz,20dB21dBmInGaPHBT BroadbandHighLinearityAmplifier TheMMG3002NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicatio | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3002NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu | freescaleFreescaleiscreatingasmarter 飞思卡尔 | freescale | ||
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3002NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
Heterojunction Bipolar Transistor Technology (InGaP HBT) HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3002NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu | freescaleFreescaleiscreatingasmarter 飞思卡尔 | freescale |
详细参数
- 型号:
MMG
- 制造商:
RUBYCON
- 制造商全称:
RUBYCON CORPORATION
- 功能描述:
METALLIZED POLYESTER FILM CAPACITORS
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
95 |
89 |
本站现库存 |
询价 | ||||
Freescale |
0945+ |
SOT89 |
3066 |
现货-ROHO |
询价 | ||
FRESS |
08+ |
SOT89 |
10 |
原装现货价格有优势量大发货 |
询价 | ||
FREESCALE |
17+ |
SOT89 |
6200 |
100%原装正品现货 |
询价 | ||
FREESCAL |
1408+ |
QFN16 |
9500 |
绝对原装进口现货可开增值税发票 |
询价 | ||
FREESCALE |
16+ |
SOT89 |
3786 |
一片起订!原装低价支持实单! |
询价 | ||
FREESCALE |
2017+ |
SOT89 |
42588 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
FREESCALESEMICONDUCTOR |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 | ||
FREESCALE |
23+ |
SOT89 |
12000 |
全新原装优势 |
询价 | ||
MACMIC |
23+ |
模块 |
200 |
原装正品,假一罚十 |
询价 |
相关规格书
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- MMK15224J250B04L4BULK
- MMK15225K100B06L4BULK
- MMK15475K63B06L4BULK
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相关库存
更多- MMG20241HT1
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- MMIX1F520N075T2
- MMIX1T550N055T2
- MMJT350T1G
- MMJT9435T3
- MMJX1H40N150
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- MMK10224J250A02L4BULK
- MMK10472J1000A01L4BULK
- MMK10473K630A04L4BULK
- MMK10474K100A01L4BULK
- MMK10782J400A01L4BULK
- MMK15104J630B10L4BULK
- MMK15105K100B04L4BULK
- MMK15105K250B06L4BULK
- MMK15185J63B04L4BULK
- MMK15225J63B05L4BULK
- MMK15334K100B04L4BULK
- MMK15684K250B10L4BULK
- MMK22.5106K100D20L4TRAY
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