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MMG

METALLIZED POLYESTER FILM CAPACITORS

RubyconRubycon Corporation

红宝石RUBYCON株式会社

MMG05N60D

POWERLUX IGBT

ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. •Built–InFreeWheelingDiode •Built–InGateProtectionZenerDiode •IndustryStandardPackage(SOT223) •HighSpeedEoff:Typic

MotorolaMotorola, Inc

摩托罗拉

MMG1001NT1

Gallium Arsenide CATV Integrated Amplifier Module

Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi

freescaleFreescaleiscreatingasmarter

飞思卡尔

MMG1001NT1

Gallium Arsenide CATV Integrated Amplifier Module

Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

MMG1001R2

Gallium Arsenide CATV Integrated Amplifier Module

Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi

MotorolaMotorola, Inc

摩托罗拉

MMG1001R2

Gallium Arsenide CATV Integrated Amplifier Module

Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi

freescaleFreescaleiscreatingasmarter

飞思卡尔

MMG1001T1

Gallium Arsenide CATV Integrated Amplifier Module

Description •24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •Unconditi

freescaleFreescaleiscreatingasmarter

飞思卡尔

MMG100CE065PD6TC

650V 100A Three Level Inverter Module

PRODUCTFEATURES □Temperaturesenseincluded □Freewheelingdiodeswithfastandsoftreverserecovery □650VIGBTCHIP(Trench+FieldStoptechnology) □Lowswitchinglossesandshorttailcurrent □Lowsaturationvoltageandpositivetemperaturecoefficient APPLICATIONS □SolarApplicat

MACMICMacMic

宏微宏微科技有限公司

MMG2001R2

GALLIUM ARSENIDE CATV INTEGRATED AMPLIFIER MODULE

Description •24VdcSupply,40to870MHz,CATVIntegratedForwardPowerDoublerAmplifierModule Features •Specifiedfor79–,112–and132–ChannelLoading •ExcellentDistortionPerformance •HigherOutputCapability •Built–inInputDiodeProtection •GaAsFETTransistorTechnology •U

MotorolaMotorola, Inc

摩托罗拉

MMG2001T1

Gallium Arsenide CATV Integrated Amplifier Module

Description •24VdcSupply,40to870MHz,CATVIntegratedForwardPowerDoublerAmplifierModule Features •Specifiedfor79-,112-and132-ChannelLoading •ExcellentDistortionPerformance •HigherOutputCapability •Built-inInputDiodeProtection •GaAsFETTransistorTechnology •U

freescaleFreescaleiscreatingasmarter

飞思卡尔

MMG2401

Indium Gallium Phosphorus HBT

IndiumGalliumPhosphorusHBT WLANPowerAmplifier Designedfor802.11ganddualmodeapplicationswithfrequenciesfrom2400to2500MHz. •26.5dBmP1dB@2450MHz •PowerGain:27.5dBTyp(@f=2450MHz,ClassAB) •HighGain,HighEfficiencyandHighLinearity •EVM=3Typ@Pout=+1

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

MMG2401NR2

Indium Gallium Phosphorus HBT - WLAN Power Amplifier

IndiumGalliumPhosphorusHBT WLANPowerAmplifier Designedfor802.11ganddualmodeapplicationswithfrequenciesfrom2400to2500MHz. Designedfor802.11ganddualmodeapplicationswithfrequenciesfrom2400to2500MHz. •26.5dBmP1dB@2450MHz •PowerGain:27.5dBTyp(@f=2450M

freescaleFreescaleiscreatingasmarter

飞思卡尔

MMG2401NR2

Indium Gallium Phosphorus HBT

IndiumGalliumPhosphorusHBT WLANPowerAmplifier Designedfor802.11ganddualmodeapplicationswithfrequenciesfrom2400to2500MHz. •26.5dBmP1dB@2450MHz •PowerGain:27.5dBTyp(@f=2450MHz,ClassAB) •HighGain,HighEfficiencyandHighLinearity •EVM=3Typ@Pout=+1

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

MMG25CB120X6TC

1200V 25A Six-Pack Module

PRODUCTFEATURES □SolderContactTechnology,Ruggedmountingduetointegrated Mountingclamps □Temperaturesenseincluded □Freewheelingdiodeswithfastandsoftreverserecovery □SubstrateforLowThermalResistance □Lowsaturationvoltageandpositivetemperaturecoefficient □Fast

MACMICMacMic

宏微宏微科技有限公司

MMG3001NT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3001NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itis

freescaleFreescaleiscreatingasmarter

飞思卡尔

MMG3001NT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3001NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

MMG3002NT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

40-3600MHz,20dB21dBmInGaPHBT BroadbandHighLinearityAmplifier TheMMG3002NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicatio

MotorolaMotorola, Inc

摩托罗拉

MMG3002NT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3002NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu

freescaleFreescaleiscreatingasmarter

飞思卡尔

MMG3002NT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3002NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

MMG3002NT1_08

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3002NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu

freescaleFreescaleiscreatingasmarter

飞思卡尔

详细参数

  • 型号:

    MMG

  • 制造商:

    RUBYCON

  • 制造商全称:

    RUBYCON CORPORATION

  • 功能描述:

    METALLIZED POLYESTER FILM CAPACITORS

供应商型号品牌批号封装库存备注价格
95
89
本站现库存
询价
Freescale
0945+
SOT89
3066
现货-ROHO
询价
FRESS
08+
SOT89
10
原装现货价格有优势量大发货
询价
FREESCALE
17+
SOT89
6200
100%原装正品现货
询价
FREESCAL
1408+
QFN16
9500
绝对原装进口现货可开增值税发票
询价
FREESCALE
16+
SOT89
3786
一片起订!原装低价支持实单!
询价
FREESCALE
2017+
SOT89
42588
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
FREESCALESEMICONDUCTOR
16+
NA
8800
原装现货,货真价优
询价
FREESCALE
23+
SOT89
12000
全新原装优势
询价
MACMIC
23+
模块
200
原装正品,假一罚十
询价
更多MMG供应商 更新时间2024-5-7 16:00:00