Complementary Plastic Silicon Power Transistors

The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications.

Features

• Collector−Emitter Sustaining Voltage −

VCEO(sus) = 40 Vdc − MJE170, MJE180

= 60 Vdc − MJE171, MJE181

= 80 Vdc − MJE172, MJE182

• DC Current Gain −

hFE = 30 (Min) @ IC = 0.5 Adc

= 12 (Min) @ IC = 1.5 Adc

• Current−Gain − Bandwidth Product −

fT = 50 MHz (Min) @ IC = 100 mAdc

• Annular Construction for Low Leakages −

ICBO = 100 nA (Max) @ Rated VCB

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Machine Model, C

Human Body Model, 3B

• Pb−Free Packages are Available*

MJE181G属于分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个。安森美半导体公司制造生产的MJE181G晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。