零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
MIS6601 | Dual P-Channel 20 V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitchforPortableApplications •BatterySwitchforPortableDevices •Computers -BusSwitch -LoadSwitch | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | |
ComfortProbewithRemovable4mmBananaPlugAdapter | POMONA Pomona Electronics | POMONA | ||
750MHzto1160MHzRxMixerwithIntegratedFractional-NPLLandVCO | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
1200MHzto3600MHzRxMixerwithIntegratedFractional-NPLLandVCO | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
750MHzto1160MHzRxMixerwithIntegratedFractional-NPLLandVCO | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowNoiseJFETAmplifiers | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-andP-ChannelV(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
30VComplementaryMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
ComplementaryTrenchMOSFET ■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
ComplementaryEnhancementModeFieldEffectTransistor GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
NPChannelMOSFET Features N-Ch: *VDS(V)=30V *ID=3.4A(VGS=10V) *RDS(ON)60m(VGS=10V) *RDS(ON)70m(VGS=4.5V) *RDS(ON)90m(VGS=2.5V) P-Ch: *VDS(V)=-30V *ID=-2.3A(VGS=-10V) *RDS(ON)115m(VGS=-10V) *RDS(ON)150m(VGS=-4.5V) *RDS(ON)200m(VGS=-2.5V) | UMWUMW 友台友台半导体 | UMW | ||
ComplementaryTrenchMOSFET ■Features N-Channel: ●VDS(V)=30V ●ID=3.4A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
ComplementaryEnhancementModeFieldEffectTransistor GeneralDescription TheAO6601usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO6601isPb-free(meetsROHS&Sony259specifications).AO6 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
HELP3TMBand1/WCDMA/TD-SCDMA3.4V/28.25dBmLinearPAModule | ANADIGICS ANADIGICS | ANADIGICS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-19A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-16A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-16A,RDS(ON)=86mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=125mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-60V,-4.3A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
P-Channel60V(D-S)MOSFET FEATURES •TrenchFET®powerMOSFET •100RgandUIStested | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
M |
23+ |
TSOP-6 |
30000 |
原装正品,假一罚十 |
询价 | ||
瑞信 |
23+ |
TSOP-6 |
63000 |
原装正品现货 |
询价 | ||
MI |
23+ |
12000 |
询价 | ||||
VBSEMI |
19+ |
TSOP-6 |
29600 |
绝对原装现货,价格优势! |
询价 | ||
瑞信 |
SOT163 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
M |
21+ |
TSOP-6 |
32462 |
询价 | |||
VB |
TSOP-6 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
Eaton |
22+ |
NA |
168 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
BUSSMANN/巴斯曼 |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
询价 | ||
MEGASYS |
13+ |
SOT23-6 |
3000 |
特价热销现货库存 |
询价 |
相关规格书
更多- MIS6611
- MIS8207
- MI-SH-103DB
- MI-SH-103DF
- MI-SH-103DMF
- MI-SH-103LB
- MI-SH-103LF
- MI-SH-103LMF
- MI-SH-105DB
- MI-SH-105DF
- MI-SH-105DMF
- MI-SH-105LB
- MI-SH-105LF
- MI-SH-105LMF
- MI-SH-109DB
- MI-SH-109DF
- MI-SH-109DMF
- MI-SH-109LB
- MI-SH-109LF
- MI-SH-109LMF
- MI-SH-112DB
- MI-SH-112DF
- MI-SH-112DMF
- MI-SH-112LB
- MI-SH-112LF
- MI-SH-112LMF
- MI-SH-124DB
- MI-SH-124DF
- MI-SH-124DMF
- MI-SH-124LB
- MI-SH-124LF
- MI-SH-124LMF
- MI-SH-148DB
- MI-SH-148DF
- MI-SH-148DMF
- MI-SH-148LB
- MI-SH-148LF
- MI-SH-148LMF
- MI-SH-203DBF
- MI-SH-203DMF
- MI-SH-203LBF
- MI-SH-203LMF
- MI-SH-205DBF
- MI-SH-205DMF
- MI-SH-205LBF
相关库存
更多- MIS-8
- MI-SH-103D
- MI-SH-103DBF
- MI-SH-103DM
- MI-SH-103L
- MI-SH-103LBF
- MI-SH-103LM
- MI-SH-105D
- MI-SH-105DBF
- MI-SH-105DM
- MI-SH-105L
- MI-SH-105LBF
- MI-SH-105LM
- MI-SH-109D
- MI-SH-109DBF
- MI-SH-109DM
- MI-SH-109L
- MI-SH-109LBF
- MI-SH-109LM
- MI-SH-112D
- MI-SH-112DBF
- MI-SH-112DM
- MI-SH-112L
- MI-SH-112LBF
- MI-SH-112LM
- MI-SH-124D
- MI-SH-124DBF
- MI-SH-124DM
- MI-SH-124L
- MI-SH-124LBF
- MI-SH-124LM
- MI-SH-148D
- MI-SH-148DBF
- MI-SH-148DM
- MI-SH-148L
- MI-SH-148LBF
- MI-SH-148LM
- MI-SH-203DB
- MI-SH-203DM
- MI-SH-203LB
- MI-SH-203LM
- MI-SH-205DB
- MI-SH-205DM
- MI-SH-205LB
- MI-SH-205LM