零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
MI90N03 | N-Channel 30-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | |
N-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
MOSFIELDEFFECTTRANSISTOR Description TheNP90N03VHGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=3.2mΩMAX.(VGS=10V,ID=45A) •Lowinputcapacitance ⎯Ciss=5000pFTYP.(VDS=25V,VGS=0V) •Designedfor | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTOR Description TheNP90N03VLGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)1=3.2mΩMAX.(VGS=10V,ID=45A) ⎯RDS(on)2=8.0mΩMAX.(VGS=4.5V,ID=35A) •Lowinputcapacitance ⎯Ciss | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
30VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@20A | PANJITPan Jit International Inc. 强茂強茂股份有限公司 | PANJIT | ||
N-Channel30V(D-S)MOSFET,ESDProtected | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | SKTECHNOLGY | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-channel30V-0.005廓-80A-DPAK/IPAKSTripFET??IIIPowerMOSFET Description ThisdeviceutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitableforthemostdemandingDC-DCconverterapplicationwherehighefficiencyistobeachieved. Generalfeatures ■RDS(on)*Qgindustry’sbenchmark ■Conductionlossesreduce | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-Channel30-V(D-S)MOSFET | TFUNKVishay Telefunken 威世威世(VISHAY)集团 | TFUNK | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET ●GeneralDescription TheTF90N03combinesadvancedtrench MOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealfor loadswitchandbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimizec | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | TUOFENG | ||
90A,30VN-CHANNEL(D-S)POWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
M |
23+ |
DPAK |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
M |
23+ |
DPAK |
10000 |
公司只做原装正品 |
询价 | ||
M |
22+ |
DPAK |
6000 |
十年配单,只做原装 |
询价 | ||
M |
23+ |
DPAK |
6000 |
原装正品,支持实单 |
询价 | ||
MI |
22+ |
TO252 |
25000 |
只有原装原装,支持BOM配单 |
询价 | ||
MI |
2023+ |
PLCC |
5800 |
进口原装,现货热卖 |
询价 | ||
APTINA |
23+ |
ILCC48 |
1900 |
原装原包环保房间现货 |
询价 | ||
APTINA |
12+ |
ILCC48 |
1900 |
刚到现货加微13425146986 |
询价 | ||
APTINA |
20+ |
ILCC48 |
9850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
APTINA |
22+ |
ILCC48 |
9852 |
只做原装正品现货,或订货假一赔十! |
询价 |
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