MGSF1N03LT1

N-CHANNELENHANCEMENT-MODETMOSMOSFET

TheseminiaturesurfacemountMOSFETsutilizeMotorola’sHighCellDensity,HDTMOSprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinspacesensitivepowermanagementcircuitry.Typicalapplicationsaredc–dcconvertersandpowermanagementin

MGSF1N03LT1

PowerMOSFET30V,2.1A,SingleN?묬hannel,SOT??3

PowerMOSFET30V,2.1A,SingleN−Channel,SOT−23 TheseminiaturesurfacemountMOSFETslowRDS(on)assureminimalpowerlossandconserveenergy,makingthesedevicesidealforuseinspacesensitivepowermanagementcircuitry.Typicalapplicationsaredc−dcconvertersandpowermanagementinp

MGSF1N03LT1G

PowerMOSFET

PowerMOSFET30V,2.1A,SingleN−Channel,SOT−23 TheseminiaturesurfacemountMOSFETslowRDS(on)assureminimalpowerlossandconserveenergy,makingthesedevicesidealforuseinspacesensitivepowermanagementcircuitry.Typicalapplicationsaredc−dcconvertersandpowermanagementinp

MGSF1N03LT1G

PowerMOSFET30V,2.1A,SingleN?묬hannel,SOT??3

MGSF1N03LT1G

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

MVGSF1N03LT1G

PowerMOSFET30V,2.1A,SingleN?묬hannel,SOT??3

MVGSF1N03LT1G

PowerMOSFET

PowerMOSFET30V,2.1A,SingleN−Channel,SOT−23 TheseminiaturesurfacemountMOSFETslowRDS(on)assureminimalpowerlossandconserveenergy,makingthesedevicesidealforuseinspacesensitivepowermanagementcircuitry.Typicalapplicationsaredc−dcconvertersandpowermanagementinp