首页 >MGBR20S60CL-TND-R>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
MGBR20S60CL-TND-R | DUAL MOS GATED BARRIER RECTIFIERS | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | |
MGBR20S60CL-TND-R | DUAL MOS GATED BARRIER RECTIFIERS | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | |
20.0AmpereInsulatedDualCommonCathodeSuperFastRecoveryRectifiers | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | THINKISEMI | ||
20.0AmpereInsulatedDualCommonCathodeUltraFastRecoveryRectifiers | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | THINKISEMI | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) •100avalanchetested •MinimumLot-to-L | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600V20AaMOSPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
600V20AaMOSTMPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
600V20AaMOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor •FEATURES •WithTO-247packaging •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •PFCstages •Powersupply •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600V20AaMOSPowerTransistor GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max) •100avalanchetested •MinimumLot-to-L | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600V20AaMOS GeneralDescription TheAOK20S60hasbeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilitythispartcanbea | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
600V20AaMOSPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.199Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600V20AaMOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
600V20AaMOSPowerTransistor GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
600V20AaMOS GeneralDescription TheAOT20S60&AOB20S60&AOTF20S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650-V(D-S)SuperJunctionMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
UTC/友顺 |
22+ |
TO-220 TO-220F |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | ||
UTC/友顺 |
24+ |
TO220 |
100000 |
原装现货 |
询价 | ||
UTC |
20232024 |
TO220 |
6000 |
老牌代理,长期现货 |
询价 | ||
友顺UTC |
2019 |
TO-220 |
55000 |
UTC原装正品 |
询价 | ||
UTC友顺 |
24+ |
TO-263 |
32560 |
16年现货供应商UTC友顺代理批量的来 |
询价 | ||
UTC/友顺 |
23+ |
TO-277 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
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相关库存
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