MDP9N50TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDP9N50TH

N-Channel MOSFET 500V, 9.0 A, 0.85(ohm)

9N50

FastSwitchingSpeed

9N50

9A,500VN-CHANNELPOWERMOSFET

9N50

N-Channel650V(D-S)PowerMOSFET

9N50B

9A500VN-channelenhancedfieldeffecttransistor

9N50C

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

9N50C

500VN-ChannelMOSFET

9N50K-MT

N-CHANNELPOWERMOSFET

AM9N50P

N-Channel500-V(D-S)MOSFET

AOD9N50

iscN-ChannelMOSFETTransistor

AOD9N50

500V,9AN-ChannelMOSFET

AOI9N50

500V,9AN-ChannelMOSFET

AOI9N50

iscN-ChannelMOSFETTransistor

AOT9N50

iscN-ChannelMOSFETTransistor

AOT9N50

500V,9AN-ChannelMOSFET

AOTF9N50

500V,9AN-ChannelMOSFET

AOTF9N50

iscN-ChannelMOSFETTransistor

EQI9N50

500VN-ChannelMOSFET

Features •9.0A,500V,RDS(on)=0.73Ω@VGS=10V •Lowgatecharge(typical28nC) •LowCrss(typical20pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FDPF9N50NZ

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti