首页 >MBRS6040CTHMNG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSV POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSV POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast | ADPOW Advanced Power Technology | ADPOW | ||
UltrasonicFlowMetersforGasMeters GeneralDescription AS6040isanultrasonicflowconverter(UFC)solutiondedicatedtogasmeters,butsuitableforwatermeters,too.Thesystemismadeoffourmajorblocks:supervisor,frontend,postprocessingandinterface.Thesupervisormanagesalltasksandisthemasterofthewholesyst | SCIOSENSESciosense B.V. 感奥艾半导体 | SCIOSENSE | ||
UltrasonicFlowMetersforGasMeters GeneralDescription AS6040isanultrasonicflowconverter(UFC)solutiondedicatedtogasmeters,butsuitableforwatermeters,too.Thesystemismadeoffourmajorblocks:supervisor,frontend,postprocessingandinterface.Thesupervisormanagesalltasksandisthemasterofthewholesyst | SCIOSENSESciosense B.V. 感奥艾半导体 | SCIOSENSE | ||
DevelopmentKitUserGuide | SCIOSENSESciosense B.V. 感奥艾半导体 | SCIOSENSE | ||
DevelopmentKitUserGuide | SCIOSENSESciosense B.V. 感奥艾半导体 | SCIOSENSE | ||
Crystal | CTSCTS Electronic Components 西迪斯西迪斯公司 | CTS | ||
ChargerProtectionICwithInternalFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
SwitchedCapacitorVoltageConverterforCellular | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TSCAmericaInc. |
19+ |
- |
56800 |
只卖原装正品!价格超越代理!可开增值税发票! |
询价 | ||
TAIWAN |
1809+ |
TO-263 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
TSC America Inc. |
22+ |
9000 |
原厂渠道,现货配单 |
询价 | |||
TSC America Inc. |
21+ |
13880 |
公司只售原装,支持实单 |
询价 | |||
TSC America Inc. |
21+ |
610880 |
本公司只售原装 支持实单 |
询价 | |||
TSC America Inc. |
23+ |
9000 |
原装正品，支持实单 |
询价 | |||
TSC-台半 |
24+25+/26+27+ |
TO-263-3 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
Taiwan Semiconductor Corporati |
21+ |
4-XFBGA,WLBGA |
21000 |
专业分立半导体,原装渠道正品现货 |
询价 | ||
ON/安森美 |
23+ |
SMB |
89630 |
当天发货全新原装现货 |
询价 | ||
ON/安森美 |
SMB |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
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