General Description:

Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters. This device offers a low forward voltage performance in a power surface mount package in applications where size and weight are critical.

Features:

• Compact surface mount package with J-bend leads (SMC).

• 3.0 Watt Power Dissipation package.

• 3.0 Ampere, forward voltage less than 500 mv

Storage Temperature -65 to +150 ℃

Maximum Junction Temperature -65 to +125 ℃

Repetitive Peak Reverse Voltage (VRRM) 20 V

Average Rectified Forward Current (TL = 100℃) 3.0 A

(TL = 90℃) 4.0 A

Surge Non Repetitive Forward Current (Half wave, single phase, 60 Hz) 80 A