首页 >MBRB2070CT>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MBRB2070CT | 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features •GuardRingDieConstructionforTransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •HighCurrentCapabilityandLowForwardVoltageDrop •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications •PlasticM | DIODESDiodes Incorporated 达尔科技 | DIODES | |
MBRB2070CT | DUAL SCHOTTKY RECTIFIERS VOLTAGERANGE:70-100VCURRENT:20A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,free wheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | |
MBRB2070CT | DUAL SCHOTTKY RECTIFIERS | DSK Diode Semiconductor Korea | DSK | |
AVSAdaptorBoardforUSBAVSSystemMainboards | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
Stereo2.6WAudioPowerAmplifier(withDCVolumeControl) | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
Stereo2.6WAudioPowerAmplifier(withDCVolumeControl) | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
Stereo2.6WAudioPowerAmplifier(withDCVolumeControl) | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-20V/-8A,RDS(ON)=78mΩ(typ.)@VGS=-10VRDS(ON)=113mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •TO-252Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems. | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-20V/-3A,RDS(ON)=50mΩ(typ.)@VGS=-4.5VRDS(ON)=70mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •SwitchingRegulators •SwitchingConverters | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-20V/-3A,RDS(ON)=50mΩ(typ.)@VGS=-4.5VRDS(ON)=70mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •SwitchingRegulators •SwitchingConverters | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-20V/-3A,RDS(ON)=50mΩ(typ.)@VGS=-4.5VRDS(ON)=70mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •SwitchingRegulators •SwitchingConverters | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-20V/-3A,RDS(ON)=50mΩ(typ.)@VGS=-4.5VRDS(ON)=70mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •SwitchingRegulators •SwitchingConverters | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-20V/-3A,RDS(ON)=50mΩ(typ.)@VGS=-4.5VRDS(ON)=70mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •SwitchingRegulators •SwitchingConverters | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-20V/-8A,RDS(ON)=78mΩ(typ.)@VGS=-10VRDS(ON)=113mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •TO-252Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems. | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-20V/-8A,RDS(ON)=78mΩ(typ.)@VGS=-10VRDS(ON)=113mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •TO-252Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems. | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-20V/-8A,RDS(ON)=78mΩ(typ.)@VGS=-10VRDS(ON)=113mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •TO-252Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems. | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-20V/-8A,RDS(ON)=78mΩ(typ.)@VGS=-10VRDS(ON)=113mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •TO-252Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems. | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-20V/-8A,RDS(ON)=78mΩ(typ.)@VGS=-10VRDS(ON)=113mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •TO-252Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems. | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-20V/-8A,RDS(ON)=78mΩ(typ.)@VGS=-10VRDS(ON)=113mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •TO-252Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems. | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
P-ChannelEnhancementModeMOSFET Features •-20V/-8A,RDS(ON)=78mΩ(typ.)@VGS=-10VRDS(ON)=113mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •TO-252Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems. | ANPECAnpec Electronics Corp 茂达电子 | ANPEC |
详细参数
- 型号：
MBRB2070CT
- 制造商：
BILIN
- 制造商全称：
Galaxy Semi-Conductor Holdings Limited
- 功能描述：
DUAL SCHOTTKY RECTIFIERS
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BILIN |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
08PB |
90000 |
询价 | ||||
ON |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
询价 | ||
VishaySemiconductorDiode |
19+ |
D2PAK |
56800 |
只卖原装正品!价格超越代理!可开增值税发票! |
询价 | ||
MCC(美微科) |
21+ |
D-PACK |
12588 |
原装正品,价格优势 |
询价 | ||
23+ |
N/A |
38160 |
正品授权货源可靠 |
询价 | |||
IR |
2020+ |
D2-PAK |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IR |
21+ |
TO-263 |
30490 |
原装现货库存 |
询价 | ||
Vishay Semiconductor Diodes Di |
22+ |
D2PAK |
9000 |
原厂渠道,现货配单 |
询价 | ||
Vishay Semiconductor Diodes Di |
21+ |
D2PAK |
13880 |
公司只售原装,支持实单 |
询价 |
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