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MBR10H100CT

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

SchottkyBarrierRectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervo

KERSEMI

Kersemi Electronic Co., Ltd.

MBR10H100CT

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

SchottkyBarrierRectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervo

KERSEMI

Kersemi Electronic Co., Ltd.

MBR10H100CT

10.0AMP. Schottky Barrier Rectifiers

Features ●PlasticmaterialusedcarriesUnderwritersLaboratoryClassifications94V-0 ●Metalsiliconjunction,majoritycarrierconduction ●Lowpowerloss,highefficiency ●Highcurrentcapability,lowforwardvoltagedrop ●Highsurgecapability ●Foruseinpowersupply–outputrectif

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

MBR10H100CT

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

SchottkyBarrierRectifiers Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervo

KERSEMI

Kersemi Electronic Co., Ltd.

MBR10H100CT

SCHOTTKY BARRIER RECTIFIERS

Features Highefficienctyoperation Lowpowerloss Highforwardsurgecapability LeadfreeincompliancewithEURoHS 2011/65/EUdirective GreenmoldingcompoundasperIEC61249 Std..(HalogenFree) Lowstoredchargemajoritycarrierconduction

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

MBR10H100CT

MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series

Features •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 •Dualrectifierconstruction,positivecentertap •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervoltageprotection •Foruseinlowvol

VAISHVaishali Semiconductor

Vaishali Semiconductor

MBR10H100CT

SWITCHMODE Power Rectifier 100 V, 10 A

FeaturesandBenefits •LowForwardVoltage:0.61V@125°C •LowPowerLoss/HighEfficiency •HighSurgeCapacity •175°COperatingJunctionTemperature •10ATotal(5.0APerDiodeLeg) •Guard−RingforStressProtection •Pb−FreePackageisAvailable Applications •PowerSupply−Outp

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBR10H100CT

10.0 AMPS. Schottky Barrier Rectifiers

Features ●PlasticmaterialusedcarriesUnderwritersLaboratoryClassifications94V-0 ●Metalsiliconjunction,majoritycarrierconduction ●Lowpowerloss,highefficiency ●Highcurrentcapability,lowforwardvoltagedrop ●Highsurgecapability ●Foruseinpowersupply–outputrectif

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

MBR10H100CT

Dual Common-Cathode High-Voltage Schottky Rectifier

DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •H

VishayVishay Siliconix

威世科技威世科技半导体

MBR10H100CT

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES •Powerpack •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof 245°C(forTO-263ABpackage)

VishayVishay Siliconix

威世科技威世科技半导体

MBR10H100CT

Dual High-Voltage Schottky Rectifiers

DualCommon-CathodeHigh-VoltageSchottkyRectifier HighBarrierTechnologyforImprovedHighTemperaturePerformance FEATURES •Guardringforovervoltageprotection •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •H

VishayVishay Siliconix

威世科技威世科技半导体

MBR10H100CT

Schottky Barrier Diode in a TO-220 Plastic Package

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

MBR10H100CT

10.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

MBR10H100CT

10.0 AMPS. Schottky Barrier Rectifiers

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

MBR10H100CT

10.0AMPS. Schottky Barrier Rectifiers

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

MBR10H100CT

Dual Common Cathode High Voltage Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

MBR10H100CT

Dual Common Cathode Schottky Rectifier

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

MBR10H100CT

Power Schottky Rectifier

SISEMICShenzhen SI Semiconductors Co.,LTD.

赛恩半导体深圳市赛恩半导体有限公司

MBR10H100CT

包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 二极管 - 整流器 - 阵列 描述:DIODE ARRAY SCHOTTKY 100V TO220

Taiwan Semiconductor Corporation

Taiwan Semiconductor Corporation

Taiwan Semiconductor Corporation

MBR10H100CT

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-220-3 类别:分立半导体产品 二极管 - 整流器 - 阵列 描述:DIODE ARRAY SCHOTTKY 100V TO220

ONSEMION Semiconductor

安森美半导体安森美半导体公司

产品属性

  • 产品编号:

    MBR10H100CT

  • 制造商:

    Taiwan Semiconductor Corporation

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 阵列

  • 包装:

    管件

  • 二极管配置:

    1 对共阴极

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io)(每二极管):

    10A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 工作温度 - 结:

    -55°C ~ 175°C

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220AB

  • 描述:

    DIODE ARRAY SCHOTTKY 100V TO220

供应商型号品牌批号封装库存备注价格
ON
08+(pbfree)
TO-2203LEADSTANDA
8866
询价
ON
2015+
TO-2203
12500
全新原装,现货库存长期供应
询价
LT
16+
TO-220
8000
原装现货请来电咨询
询价
TSC
17+
TO-220
6200
询价
LT
2020+
TO-220
35000
100%进口原装正品公司现货库存
询价
gs
dc10
原厂封装
200
INSTOCK:50/tube/to220
询价
ON
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
LT
24+
TO-220
90000
一级代理商进口原装现货、假一罚十价格合理
询价
VISHAY
224
TO-220
127
特价销售欢迎来电!!
询价
ON/安森美
1926+
TO-220AB
6852
只做原装正品现货!或订货假一赔十!
询价
更多MBR10H100CT供应商 更新时间2024-6-14 15:30:00