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MBM29DL324BE90TR中文资料PDF规格书
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MBM29DL324BE90TR规格书详情
■ DESCRIPTION
The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
■ FEATURES
• 0.23 µm Process Technology
• Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes (Refer to “MBM29DL32XTE/BE Device Bank Divisions” in “■ FEATURES”)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
• Single 3.0 V read, program, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP (1) (Package suffix : TN − Normal Bend Type, TR − Reversed Bend Type)
63-ball FBGA (Package suffix : PBT)
• Minimum 100,000 program/erase cycles
• High performance
80 ns maximum access time
• Sector erase architecture
Eight 4 Kword and sixty-three 32 Kword sectors in word mode
Eight 8 Kbyte and sixty-three 64 Kbyte sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• HiddenROM region
64 Kbyte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC input pin
At VIL, allows protection of boot sectors, regardless of sector group protection/unprotection status
At VACC, increases program performance
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
• Low VCC write inhibit ≤ 2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector group protection
Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector group protection command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
Temporary sector group unprotection via the RESET pin.
• In accordance with CFI (Common Flash Memory Interface)
产品属性
- 型号:
MBM29DL324BE90TR
- 制造商:
SPANSION
- 制造商全称:
SPANSION
- 功能描述:
FLASH MEMORY CMOS 32 M(4 M X 8/2 M X 16) BIT Dual Operation
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FUJI |
2016+ |
TSOP48 |
6528 |
只做进口原装现货!或订货,假一赔十! |
询价 | ||
FUJITSU/富士通 |
TSSOP48 |
28533 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十! |
询价 | |||
FUJ |
2020+ |
TSOP48 |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
FUJ |
2021+ |
TSOP48 |
6040 |
百分百原装正品 |
询价 | ||
FUJITSU/富士通 |
23+ |
NA/ |
3461 |
原装现货,当天可交货,原型号开票 |
询价 | ||
FUJI |
22+ |
TSSOP |
3000 |
原装正品,支持实单 |
询价 | ||
FUJITSU |
TSOP |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
FUJITSU |
22+ |
TSOP48 |
5000 |
全新原装现货!价格优惠!可长期 |
询价 | ||
FUJITSU |
22+ |
TSOP-48 |
4650 |
询价 | |||
FUJITSU |
TSOP |
19 |
询价 |