首页>MB84VD22192EE>规格书详情
MB84VD22192EE中文资料PDF规格书
相关芯片规格书
更多- MB84VD2218XEG
- MB84VD22184EH-90-PBS
- MB84VD22191EH-90
- MB84VD22191EE-90-PBS
- MB84VD22192EC-90-PBS
- MB84VD2218XEC
- MB84VD22192EC
- MB84VD22191EE-90
- MB84VD22191EG
- MB84VD22191EC
- MB84VD22192EC-90
- MB84VD22184EH-90
- MB84VD22191EG-90-PBS
- MB84VD22191EC-90-PBS
- MB84VD22191EH
- MB84VD22191EC-90
- MB84VD22184FM
- MB84VD22191FM-70PBS
MB84VD22192EE规格书详情
■ FEATURES
• Power supply voltage of 2.7 to 3.3 V
• High performance
90 ns maximum access time (Flash)
85 ns maximum access time (SRAM)
• Operating Temperature
–25 to +85°C
• Package 73-ball BGA
1.FLASH MEMORY
• Simultaneous Read/Write operations (dual bank)
Miltiple devices available with different bank sizes
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
• Minimum 100,000 write/erase cycles
• Sector erase architecture
Eight 4 K words and sixty three 32 K words.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
MB84VD2218X: Top sector
MB84VD2219X: Bottom sector
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready-Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
• Low VCCf write inhibit ≤ 2.5 V
• Hidden ROM (Hi-ROM) region
64K byte of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC input pin
At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status
(MB84VD2218XEC/EE:SA69,SA70 MB84VD2219XEC/EE:SA0,SA1)
At VIH, allows removal of boot sector protection
At VACC, program time will reduse by 40.
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
• Please refer to “MBM29DL32XTE/BE” data sheet in detailed function
2.SRAM
• Power dissipation
Operating : 50 mA max.
Standby : 15 µA max.
• Power down features using CE1s and CE2s
• Data retention supply voltage: 1.5 V to 3.3 V
• CE1s and CE2s Chip Select
• Byte data control: LBs(DQ0-DQ7), UBs(DQ8-DQ15)
产品属性
- 型号:
MB84VD22192EE
- 制造商:
FUJITSU
- 制造商全称:
Fujitsu Component Limited.
- 功能描述:
32M(x 8/x16) FLASH MEMORY & 4M(x 8/x16) STATIC RAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FUJISTU |
22+23+ |
NP |
26566 |
绝对原装正品全新进口深圳现货 |
询价 | ||
FUJITSU/富士通 |
NP |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
FUJITSU/富士通 |
2122+ |
NP |
9890 |
全新原装进口,优势渠道,价格美丽,可出样品来电咨询 |
询价 | ||
FUJISTU |
24+ |
NP |
5000 |
全现原装公司现货 |
询价 | ||
3000 |
公司现货 |
询价 | |||||
FUJITSU/富士通 |
2022+ |
421 |
全新原装 货期两周 |
询价 | |||
0421+ |
LQFP |
1 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | |||
FUJITSU/富士通 |
22+ |
NP |
50000 |
只做原装正品,假一罚十,欢迎咨询 |
询价 | ||
FUJITSU/富士通 |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
FUJISTU |
2016+ |
NP |
4558 |
只做进口原装现货!假一赔十! |
询价 |