MAX5855

16-Bit, 4.9Gsps Wideband Interpolating and Modulating RF DAC with JESD204B Interface

MAX5855

MAX5855 Evaluation Kit

MAX5855EVKIT

MAX5855 Evaluation Kit

MAX5855EXE

16-Bit, 4.9Gsps Wideband Interpolating and Modulating RF DAC with JESD204B Interface

MAX5855EXET

16-Bit, 4.9Gsps Wideband Interpolating and Modulating RF DAC with JESD204B Interface

MAX5855EVKIT#

包装：盒 类别：开发板，套件，编程器 评估板 - 数模转换器（DAC） 描述：EVAL MAX5855 RF DAC

MAX5855EXE+

包装：托盘 封装/外壳：144-LFBGA，FCCSPBGA 功能：VCO/PLL 合成器 类别：RF/IF，射频/中频和 RFID RF 其它 IC 和模块 描述：IC DAC RF 4.9GSPS 144FCCSP

MAX5855EXE+T

包装：托盘 封装/外壳：144-LFBGA，FCCSPBGA 功能：VCO/PLL 合成器 类别：RF/IF，射频/中频和 RFID RF 其它 IC 和模块 描述：UNIVERSAL WIDEBAND BASEBAND TO R

5855

CustomerSpecification

BCM-5855

COMMONMODECHOKESURFACEMOUNT

BCM-5855C

INDUCTORSANDCOMMONMODECHOKE

C5855

HORIZONTALDEFLECTIONOUTPUTFORSUPERHIGHRESOLUTION

HORIZONTALDEFLECTIONOUTPUTFORSUPERHIGHRESOLUTION DISPLAY,COLORTV,DIGITALTV HIGHSPEEDSWITCHINGAPPLICATIONS 1.HighVoltage:VCBO=1500V 2.LowSaturationVoltage:VCE(sat)=3V(max) 3.HighSpeed:tf(2)=0.1µs(typ.)

C5855A

HORIZONTALDEFLECTIONOUTPUTFORSUPERHIGHRESOLUTION

HORIZONTALDEFLECTIONOUTPUTFORSUPERHIGHRESOLUTION DISPLAY,COLORTV,DIGITALTV HIGHSPEEDSWITCHINGAPPLICATIONS 1.HighVoltage:VCBO=1500V 2.LowSaturationVoltage:VCE(sat)=3V(max) 3.HighSpeed:tf(2)=0.1µs(typ.)

CPH5855

MOSFET:N-ChannelSiliconMOSFETSBD:SchottkyBarrierDiodeGeneral-PurposeSwitchingDevice

Features •CompositetypewithaN-channelsilliconMOSFETandaschottkybarrierdiodecontainedinonepackagefacilitatinghigh-densitymounting. [MOSFET] •1.8Vdrive. [SBD] •Shortreverserecoverytime. •Lowforwardvoltage.

RF-5855

AC/DCBatteryChargers

S5855A

PWMOUTPUTTEMPERATURESENSORIC

SI5855CDC

P-Channel20-V(D-S)MOSFETWithSchottkyDiode

SI5855DC

P-Channel1.8-V(G-S)MOSFETWithSchottkyDiode

SI5855DC

P-Channel1.8-V(G-S)MOSFETWithSchottkyDiode

Si5855DC

P-Channel1.8V(G-S)MOSFETwithSchottkyDiode