MAX2314EEI

CDMA IF VGAs and I/Q Demodulators with VCO and Synthesizer

GeneralDescription TheMAX2310/MAX2312/MAX2314/MAX2316areIFreceiversdesignedfordual-band,dual-mode,andsingle-modeN-CDMAandW-CDMAcellularphonesystems.Thesignalpathconsistsofavariablegainamplifier(VGA)andI/Qdemodulator.Thedevicesfeatureguaranteed+2.7Voperation,a

MAX2314EEI

CDMA IF VGAs and I/Q Demodulators with VCO and Synthesizer

2314

HighpassFilter

2314-RC

HighCurrentToroidInductors

2314-RC

HighCurrentToroidInductors

2314-RC

HighCurrentToroidInductors

2314-RC

HighCurrentToroidInductors

2314-RC

HighCurrentToroidInductorsHorizontalorverticalmount

2314-V-RC

HighCurrentToroidInductors

AM2314N

N-Channel20V(D-S)MOSFET

TheseminiaturesurfacemountMOSFETsutilizeHighCellDensityprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinpowermanagementcircuitry.Typicalapplicationsarepowerswitch,powermanagementinportableandbattery-poweredproductssuc

AM2314NE

N-Channel20-V(D-S)MOSFET

KeyFeatures: •LowrDS(on)trenchtechnology •Lowthermalimpedance •Fastswitchingspeed TypicalApplications: •WhiteLEDboostconverters •AutomotiveSystems •IndustrialDC/DCConversionCircuits

AP2314GN

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,lowon-resistanceandcost-effectiveness. TheSOT-23Spackageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/

AP2314GN-HF

Capableof2.5Vgatedrive,Loweron-resistance

Description AdvancedPowerMOSFETsutilizedadvancedprocessingtechniquestoachievethelowestpossibleon-resistance,extremelyefficientandcost-effectivenessdevice. TheSOT-23packageiswidelyusedforcommercial-industrialapplications. ▼Capableof2.5Vgatedrive ▼Loweron-res

APM2314

N-ChannelEnhancementModeMOSFET

Features •20V/2.8A,RDS(ON)=45mΩ(typ.)@VGS=4.5V RDS(ON)=55mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPowered

APM2314A

N-ChannelEnhancementModeMOSFET

Features •20V/2.8A,RDS(ON)=45mΩ(typ.)@VGS=4.5V RDS(ON)=55mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPowered

APM2314AC-TR

N-ChannelEnhancementModeMOSFET

Features •20V/2.8A,RDS(ON)=45mΩ(typ.)@VGS=4.5V RDS(ON)=55mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPowered

APM2314AC-TRL

N-Channel20V(D-S)MOSFET

BPT-BP2314

SILICONPHOTOTRANSISTOR

APPLICATIONS ●RemoteControl,●PhotoDetector,●SmokeDetector,●AutomaticControlSystem●OpticalEncoder ABSOLUTEMAXIMUMRATINGS(Ta=25) ●Collector-to-EmitterSaturationVoltageVce(SAT).(Ib=100uA)/Ic=2mA.........0.4V(Max.) ●Emitter-to-collectorBreakdownVoltage(BVeco)......

BPT-BP2314

LED

C2314

27MHzCBTransceiverDriverApplications