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CA3100M

38MHz,OperationalAmplifier

Description TheCA3100isalargesignalwideband,highspeedoperationalamplifierwhichhasaunitygaincrossover frequency(fT)ofapproximately38MHzandanopenloop,3dBcornerfrequencyofapproximately110kHz. Features HighOpenLoopGainatVideo Frequencies......

HARRIS

HARRIS corporation

CA3100T

38MHz,OperationalAmplifier

Description TheCA3100isalargesignalwideband,highspeedoperationalamplifierwhichhasaunitygaincrossover frequency(fT)ofapproximately38MHzandanopenloop,3dBcornerfrequencyofapproximately110kHz. Features HighOpenLoopGainatVideo Frequencies......

HARRIS

HARRIS corporation

CA3100T

38MHz,OperationalAmplifier

Description TheCA3100isalargesignalwideband,highspeedoperationalamplifierwhichhasaunitygaincrossover frequency(fT)ofapproximately38MHzandanopenloop,3dBcornerfrequencyofapproximately110kHz. Features HighOpenLoopGainatVideo Frequencies......

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

CAR3100A

ITTCannonistheforemostmanufac-turerofMSandMStypeconnectorswiththewidestrangeofconnectorstyles

ITTITT Industries

ITT工业

CBB3100BKAHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BKAKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BKGHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BKGKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BLAHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BLAKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BLGHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BLGKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BMAHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BMAKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BMGHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100BMGKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100CKAHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100CKAKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100CKGHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

CBB3100CKGKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技

详细参数

  • 型号:

    MAB 3100 S GREY

  • 制造商:

    Belden Inc

  • 功能描述:

    MAB 3100 S GREY

供应商型号品牌批号封装库存备注价格
NSC
23+
SO-8
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
NSC
22+
SO-8
2250
100%全新原装公司现货供应!随时可发货
询价
NS
23+
SOP-8
3221
绝对现货库存
询价
3000
公司现货
询价
NS
原包装
3221
原装正品!假一罚十!现货库存热卖
询价
NS
SOP-8
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NS
22+/23+
SOP-8
9800
原装进口公司现货假一赔百
询价
TI/德州仪器
23+
SOP-8
89630
当天发货全新原装现货
询价
NS
2023+
SOP-8
3587
全新原厂原装产品、公司现货销售
询价
POWERBOX
2021+
DIP
11000
十年专营原装现货,假一赔十
询价
更多MAB 3100 S GREY供应商 更新时间2024-6-6 16:30:00