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M5M5256DVP-70VXL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256DVP-70G

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M5M5256DVP-70GI

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M5M5256DVP-70LL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256DVP-70VLL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256DVP-70VLL-I

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256DVP-70VLL-W

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256DVP-70VXL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMITSUBISHI electlic

三菱电机

M5M5256DVP-70XG

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M5M5256DVP-70XL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

MitsubishiMITSUBISHI electlic

三菱电机

供应商型号品牌批号封装库存备注价格
MITSUBISHI
23+
NA
25060
只做进口原装,终端工厂免费送样
询价
3000
公司存货
询价
23+
N/A
48900
正品授权货源可靠
询价
RENESAS/瑞萨
TSOP
265209
假一罚十原包原标签常备现货!
询价
RENESAS/瑞萨
21+
TSOP
5000
原装现货/假一赔十/支持第三方检验
询价
RENESAS/瑞萨
23+
TSOP
50000
全新原装正品现货,支持订货
询价
RENESAS/瑞萨
2022
TSOP
80000
原装现货,OEM渠道,欢迎咨询
询价
RENESAS/瑞萨
TSOP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
Renesas
22+
NA
30000
100%全新原装 假一赔十
询价
RENESAS/瑞萨
23+
NA/
218
优势代理渠道,原装正品,可全系列订货开增值税票
询价
更多M5M5256DVP-70VXL-I供应商 更新时间2024-5-2 9:01:00