首页 >M5M5256DFP-70LLITR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | MitsubishiMITSUBISHI electlic 三菱电机 | Mitsubishi | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre | MitsubishiMITSUBISHI electlic 三菱电机 | Mitsubishi | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre | MitsubishiMITSUBISHI electlic 三菱电机 | Mitsubishi | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre | MitsubishiMITSUBISHI electlic 三菱电机 | Mitsubishi | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre | MitsubishiMITSUBISHI electlic 三菱电机 | Mitsubishi | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre | MitsubishiMITSUBISHI electlic 三菱电机 | Mitsubishi | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | MitsubishiMITSUBISHI electlic 三菱电机 | Mitsubishi |
详细参数
- 型号：
M5M5256DFP-70LLITR
- 制造商：
Renesas Electronics Corporation
- 功能描述：
ASYNCH SRAM 256KB 32KX8 70NS SOP28 INDUSTRIAL TEMP - Tape and Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBISHI/三菱 |
SOP28 |
货真价实,假一罚十 |
25000 |
询价 | |||
MITSUBISHI/三菱 |
22+ |
SOP28 |
40256 |
本公司只做原装进口现货 |
询价 | ||
MIT |
22+ |
SOP |
6980 |
原装现货,可开13%税票 |
询价 | ||
mitsubishi |
dc00 |
原厂封装 |
400 |
INSTOCK:1000/tr/so28 |
询价 | ||
MITSUBISHI/三菱 |
23+ |
SOP28 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
MITSUBISHI/三菱 |
2022 |
SOP28 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
MITSUBISHI/三菱 |
22+ |
SOP28 |
31250 |
郑重承诺只做原装进口现货 |
询价 | ||
3000 |
公司存货 |
询价 | |||||
MITSUBISHI |
22+ |
SOP-28 |
4650 |
询价 | |||
MITSUBISHI |
23+ |
NA |
25060 |
只做进口原装,终端工厂免费送样 |
询价 |
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