首页>M5M4V4265CTP-6>规格书详情

M5M4V4265CTP-6中文资料PDF规格书

M5M4V4265CTP-6
厂商型号

M5M4V4265CTP-6

功能描述

EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM

文件大小

317.4 Kbytes

页面数量

31

生产厂商 MITSUBISHI electlic
企业简称

Mitsubishi三菱电机

中文名称

三菱电机官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-6-14 19:09:00

M5M4V4265CTP-6规格书详情

DESCRIPTION

This is a family of 262144-word by 16-bit dynamic RAMs with EDO mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. The lower supply (3.3V) operation, due to the optimization of transistor structure, provides low power dissipation while maintaining high speed operation. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application. This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.

FEATURES

● Standard 40 pin SOJ, 44 pin TSOP (II)

● Single 3.3±0.3V supply

● Low stand-by power dissipation

CMOS Input level ---------------------------------- 1.8mW (Max)

CMOS Input level ---------------------------------- 360µW (Max) *

● Operating power dissipation

M5M4V4265CXX-5,-5S -------------------------------- 486mW (Max)

M5M4V4265CXX-6,-6S -------------------------------- 432mW (Max)

M5M4V4265CXX-7,-7S -------------------------------- 396mW (Max)

● Self refresh capability *

Self refresh current ------------------------------ 100µA (Max)

● Extended refresh capability

Extended refresh current -------------------------- 100µA (Max)

● EDO mode (512-column random access), Read-modify-write, RASonly refresh, CAS before RAS refresh, Hidden refresh capabilities.

● Early-write mode, OE and W to control output buffer impedance

● 512 refresh cycles every 8.2ms (A0~A8)

● 512 refresh cycles every 128ms (A0~A8) *

● Byte or word control for Read/Write operation (2CAS, 1W type)

* : Applicable to self refresh version (M5M4V4265CJ,TP-5S,-6S, -7S : option) only

APPLICATION

Microcomputer memory, Refresh memory for CRT, Frame buffer memory for CRT

产品属性

  • 型号:

    M5M4V4265CTP-6

  • 制造商:

    MITSUBISHI

  • 制造商全称:

    Mitsubishi Electric Semiconductor

  • 功能描述:

    EDO(HYPER PAGE) MODE 4194304-BIT(262144-WORD BY 16-BIT) DYNAMIC RAM

供应商 型号 品牌 批号 封装 库存 备注 价格
MITSUBISHI/三菱
24+
TSOP
990000
明嘉莱只做原装正品现货
询价
MITSUBISHI
23+
TSSOP
20000
原厂原装正品现货
询价
MIT
21+
TSSOP
5000
原装现货/假一赔十/支持第三方检验
询价
NA
22+
N/A
354000
询价
Mitsubishi/MITSUBISHI electlic
21+
TSOP
1373
优势代理渠道,原装正品,可全系列订货开增值税票
询价
MURATA
2022+
SMD
6000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
MITSUBISHI/三菱
22+
TSOP
12000
只做原装、原厂优势渠道、假一赔十
询价
MIT
22+23+
TSOP
7480
绝对原装正品全新进口深圳现货
询价
MITSUBIS
99+
TSOP40
40
原装现货海量库存欢迎咨询
询价
MIT
2022
TSSOP
80000
原装现货,OEM渠道,欢迎咨询
询价