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M45PE40-VMP6TG

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M45PE40-VMP6TG

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

M45PE40-VMP6TG TR

包装:托盘 封装/外壳:8-VDFN 裸露焊盘 类别:集成电路(IC) 存储器 描述:IC FLASH 4MBIT SPI 75MHZ 8VDFPN

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

M45PE40-VMP6

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M45PE40-VMP6G

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

M45PE40-VMP6G

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M45PE40-VMP6P

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

M45PE40-VMP6P

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M45PE40-VMP6T

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M45PE40-VMP6TP

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M45PE40-VMP6TP

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

详细参数

  • 型号:

    M45PE40-VMP6TG

  • 功能描述:

    闪存 2.7-3.6V 4M(512Kx8)

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 数据总线宽度:

    1 bit

  • 存储类型:

    Flash

  • 存储容量:

    2 MB

  • 结构:

    256 K x 8

  • 接口类型:

    SPI

  • 电源电压-最大:

    3.6 V

  • 电源电压-最小:

    2.3 V

  • 最大工作电流:

    15 mA

  • 工作温度:

    - 40 C to + 85 C

  • 安装风格:

    SMD/SMT

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
ST
VDFPN8
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
MICRON/美光
22+
NA
3000
支持任何机构检测 只做原装正品
询价
Numonyx-ADIVISIONOFMICRO
2022
ICFLASH4MBIT75MHZ8VFQFPN
5058
原厂原装正品,价格超越代理
询价
Micron
17+
6200
询价
Micron
1844+
BGA
9852
只做原装正品假一赔十为客户做到零风险!!
询价
ST
专业铁帽
QFN
1370
原装铁帽专营,代理渠道量大可订货
询价
MICRON
22+
DFN8
21128
原装正品现货
询价
ST
20+
QFN
67500
原装优势主营型号-可开原型号增税票
询价
MICRON/美光
23+
NA
20000
美光专营原装正品
询价
Micron
1942+
N/A
908
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更多M45PE40-VMP6TG供应商 更新时间2024-6-7 14:00:00