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M36DR432C中文资料PDF规格书

M36DR432C
厂商型号

M36DR432C

功能描述

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product

文件大小

330.36 Kbytes

页面数量

46

生产厂商 STMicroelectronics
企业简称

STMICROELECTRONICS意法半导体

中文名称

意法半导体(ST)集团官网

原厂标识
数据手册

下载地址一下载地址二原厂数据手册到原厂下载

更新时间

2024-5-21 13:30:00

M36DR432C规格书详情

DESCRIPTION

The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package.

The two components are distinguished by use with three chip enable inputs: EF for the Flash memory and, E1S and E2S for the SRAM. The two components are also separately power supplied and grounded.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDDF = VDDS =1.9V to 2.1V

– VPPF = 12V for Fast Program (optional)

■ ACCESS TIME: 85,100ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36DR432C: 00A4h

– Bottom Device Code, M36DR432D: 00A5h

FLASH MEMORY

■ 32 Mbit (2Mb x16) BOOT BLOCK

– Parameter Blocks (Top or Bottom Location)

■ PROGRAMMING TIME

– 10µs typical

– Double Word Programming Option

■ ASYNCRONOUS PAGE MODE READ

– Page width: 4 Word

– Page Mode Access Time: 35ns

■ DUAL BANK OPERATION

– Read within one Bank while Program or Erase within the other

– No Delay between Read and Write Operations

■ BLOCK PROTECTION ON ALL BLOCKS

– WPF for Block Locking

■ COMMON FLASH INTERFACE

– 64 bit Security Code

SRAM

■ 4 Mbit (256K x 16 bit)

■ LOW VDDS DATA RETENTION: 1V

■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

供应商 型号 品牌 批号 封装 库存 备注 价格
STM
0336+0340+
BGA
581
询价
STM
BGA
6688
15
现货库存
询价
ST
2023+
BGA
700000
柒号芯城跟原厂的距离只有0.07公分
询价
23+
N/A
59810
正品授权货源可靠
询价
ST/意法
21+
BGA
5000
原装现货/假一赔十/支持第三方检验
询价
ST/意法
23+
NA/
10450
原装现货,当天可交货,原型号开票
询价
STM
BGA-67
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
ST/意法
LFBGA-66
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ST/STMicroelectronics/意法半导
21+
BGA
1800
优势代理渠道,原装正品,可全系列订货开增值税票
询价
ST/意法
23+
BGA
50000
全新原装正品现货,支持订货
询价