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M36DR432AD集成电路(IC)存储器规格书PDF中文资料
厂商型号 |
M36DR432AD |
参数属性 | M36DR432AD 封装/外壳为66-LFBGA;包装为托盘;类别为集成电路(IC) > 存储器;产品描述:IC FLASH 32MBIT PARALLEL 66LFBGA |
功能描述 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
文件大小 |
834.14 Kbytes |
页面数量 |
52 页 |
生产厂商 | STMicroelectronics |
企业简称 |
STMICROELECTRONICS【意法半导体】 |
中文名称 | 意法半导体(ST)集团官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-5-17 22:58:00 |
M36DR432AD规格书详情
SUMMARY DESCRIPTION
The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM.
The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied with all the bits erased (set to ‘1’).
FEATURES SUMMARY
■ Multiple Memory Product
– 1 bank of 32 Mbit (2Mb x16) Flash Memory
– 1 bank of 4 Mbit (256Kb x16) SRAM
■ SUPPLY VOLTAGE
– VDDF = VDDS =1.65V to 2.2V
– VPPF = 12V for Fast Program (optional)
■ ACCESS TIMES: 85ns, 100ns, 120ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code, M36DR432AD: 00A0h
– Bottom Device Code, M36DR432BD: 00A1h
FLASH MEMORY
■ MEMORY BLOCKS
– Dual Bank Memory Array: 4 Mbit, 28 Mbit
– Parameter Blocks (Top or Bottom location)
■ PROGRAMMING TIME
– 10µs by Word typical
– Double Word Program Option
■ ASYNCHRONOUS PAGE MODE READ
– Page Width: 4 Words
– Page Access: 35ns
– Random Access: 85ns, 100ns, 120ns
■ DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
■ BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WPF for Block Lock-Down
■ COMMON FLASH INTERFACE (CFI)
– 64 bit Unique Device Identifier
– 64 bit User Programmable OTP Cells
■ ERASE SUSPEND and RESUME MODES
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
SRAM
■ 4 Mbit (256Kb x16)
■ LOW VDDS DATA RETENTION: 1.0V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS
M36DR432AD属于集成电路(IC) > 存储器。意法半导体(ST)集团制造生产的M36DR432AD存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。
产品属性
- 产品编号:
M36DR432AD10ZA6T
- 制造商:
STMicroelectronics
- 类别:
集成电路(IC) > 存储器
- 包装:
托盘
- 存储器类型:
非易失
- 存储器格式:
闪存
- 技术:
闪存
- 存储容量:
32Mb(2M x 16)
- 存储器接口:
并联
- 电压 - 供电:
1.65V ~ 2.2V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
66-LFBGA
- 供应商器件封装:
66-LFBGA(12x8)
- 描述:
IC FLASH 32MBIT PARALLEL 66LFBGA
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
2016+ |
BGA |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ST |
23+ |
标准封装 |
18000 |
询价 | |||
ST |
23+ |
BGA |
20000 |
原厂原装正品现货 |
询价 | ||
ST/意法 |
23+ |
LFBGA66 |
89630 |
当天发货全新原装现货 |
询价 | ||
ST |
18+ |
BGA |
29980 |
全新原装现货,可出样品,可开增值税发票 |
询价 | ||
ST |
2020+ |
原厂封装 |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
ST |
BGA |
37526 |
只做原装货值得信赖 |
询价 | |||
ST |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
STM/STMicroelectronics/意法半 |
21+ |
LFBGA66 |
10375 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST |
BGA |
6000 |
原装现货,长期供应,终端可账期 |
询价 |