SUMMARY DESCRIPTION

These I2C-compatible electrically erasable programmable memory (EEPROM) devices are organized as 8192 x 8.

FEATURES SUMMARY

■ Two Wire I2C Serial Interface Supports 400 kHz Protocol

■ Single Supply Voltage:

– 2.5V to 5.5V for M34D64-W

– 1.8V to 5.5V for M34D64-R

■ Hardware Write Control of the top quarter of memory

■ BYTE and PAGE WRITE (up to 32 Bytes)

■ RANDOM and SEQUENTIAL READ Modes

■ Self-Timed Programming Cycle

■ Automatic Address Incrementing

■ Enhanced ESD/Latch-Up Behavior

■ More than 1M Erase/Write Cycles

■ More than 40 Year Data Retention

M34D64-WMN6T属于集成电路（IC） > 存储器。意法半导体（ST）集团制造生产的M34D64-WMN6T存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。