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M3010

IR TV/VCD TRANSMITTER

FEATURES功能敘述 •PINcompatiblewithSAA3010. •DOwitha38KHzcarrierforIR. APPLICATION產品應用 •TV/VCD/Audioequipment.

MOSDESIGN

一华

M3014

IR TV/VCD TRANSMITTER IR CONTROL IC

GENERALDESCRIPTION功能敘述 TheM3014isaremotecontroltransmitterASICforTV,VTR,etc.Ithasatotalof448commandswhicharedividedinto7 sub-systemgroupswith64commandseach.Thesub-systemcodemaybeselectedbyapressbutton,asliderswitchorhard wired. FEATURES產品特長 ‧Fla

MOSDESIGN

一华

M3014P

IR TV/VCD TRANSMITTER IR CONTROL IC

GENERALDESCRIPTION功能敘述 TheM3014isaremotecontroltransmitterASICforTV,VTR,etc.Ithasatotalof448commandswhicharedividedinto7 sub-systemgroupswith64commandseach.Thesub-systemcodemaybeselectedbyapressbutton,asliderswitchorhard wired. FEATURES產品特長 ‧Fla

MOSDESIGN

一华

M30162040054X0ISAR

High Performance Serial MRAM Memory

Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M30162040054X0ISAY

High Performance Serial MRAM Memory

Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M30162040054X0IWAR

High Performance Serial MRAM Memory

Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M30162040054X0IWAY

High Performance Serial MRAM Memory

Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M30162040054X0PSAR

High Performance Serial MRAM Memory

Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M30162040054X0PSAY

High Performance Serial MRAM Memory

Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M30162040054X0PWAR

High Performance Serial MRAM Memory

Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M30162040054X0PWAY

High Performance Serial MRAM Memory

Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M30162040108X0ISAR

High Performance Serial MRAM Memory

Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M30162040108X0ISAY

High Performance Serial MRAM Memory

Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M30162040108X0IWAR

High Performance Serial MRAM Memory

Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M30162040108X0IWAY

High Performance Serial MRAM Memory

Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M30162040108X0PSAR

High Performance Serial MRAM Memory

Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M30162040108X0PSAY

High Performance Serial MRAM Memory

Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M30162040108X0PWAR

High Performance Serial MRAM Memory

Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M30162040108X0PWAY

High Performance Serial MRAM Memory

Features Interface •SerialPeripheralInterfaceQSPI(4-4-4) •SingleDataRateMode:108MHz •DoubleDataRateMode:54MHz Technology •40nmpMTJSTT-MRAM VirtuallyunlimitedEnduranceandDataRetention(see EnduranceandDataRetentionspecificationinTable31) Density •4Mb,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

M3016316035NX

Parallel MRAM Memory x16

Features •Interface ParallelAsynchronousx16 •Technology 40nmpMTJSTT-MRAM •DataRetention(seeTable16.Endurance andDataRetentionDensity) 4Mb,8Mb,16Mb,32Mb •OperatingVoltageRange VCC:2.70V–3.60V •OperatingTemperatureRange Industrial:-40°Cto85°C Ind

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    M301

  • 制造商:

    Honeywell Sensing and Control

  • 功能描述:

    GENERAL MARKET VRS

供应商型号品牌批号封装库存备注价格
MAINOWER
22+
SOP24
3000
强调现货,随时查询!
询价
RENESAS
07+
QFP
40000
询价
RENESAS
2020+
QFP48
1158
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
RENESAS
2339+
QFP
5632
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
RENESAS
16+
QFP
1200
原装现货假一罚十
询价
RENESAS
2015+
QFP
19889
一级代理原装现货,特价热卖!
询价
RENESAS
16+
QFP
8000
原装现货请来电咨询
询价
RENESAS
2020+
QFP
350000
100%进口原装正品公司现货库存
询价
MHPC
1736+
SOP
15238
原厂优势渠道
询价
RENESAS/瑞萨
1341+
QFP
296
原装正品现货,可开发票,假一赔十
询价
更多M301供应商 更新时间2024-6-11 16:13:00