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M29W320DB70ZE6E

32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory

Summarydescription TheM29W320Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesameway

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W320DB70ZE6E

32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block), 3V Supply Flash memory

Summarydescription TheM29W320Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesameway

NUMONYXNUMONYX

恒忆

M29W320DB70ZE6E

包装:托盘 封装/外壳:48-TFBGA 类别:集成电路(IC) 存储器 描述:IC FLASH 32MBIT PARALLEL 48TFBGA

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

M29W320DB70ZE6

32Mbit4Mbx8or2Mbx16,BootBlock3VSupplyFlashMemory

Summarydescription TheM29W320Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesameway

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W320DB70ZE6

32Mbit(4Mbx8or2Mbx16,Non-uniformParameterBlocks,BootBlock),3VSupplyFlashmemory

Summarydescription TheM29W320Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesameway

NUMONYXNUMONYX

恒忆

M29W320DB70ZE6F

32Mbit(4Mbx8or2Mbx16,Non-uniformParameterBlocks,BootBlock),3VSupplyFlashmemory

Summarydescription TheM29W320Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesameway

NUMONYXNUMONYX

恒忆

M29W320DB70ZE6F

32Mbit4Mbx8or2Mbx16,BootBlock3VSupplyFlashMemory

Summarydescription TheM29W320Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesameway

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29W320DB70ZE6T

32Mbit(4Mbx8or2Mbx16,Non-uniformParameterBlocks,BootBlock),3VSupplyFlashmemory

Summarydescription TheM29W320Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesameway

NUMONYXNUMONYX

恒忆

M29W320DB70ZE6T

32Mbit4Mbx8or2Mbx16,BootBlock3VSupplyFlashMemory

Summarydescription TheM29W320Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesameway

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

产品属性

  • 产品编号:

    M29W320DB70ZE6E

  • 制造商:

    Micron Technology Inc.

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    32Mb(4M x 8,2M x 16)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    70ns

  • 电压 - 供电:

    2.7V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    48-TFBGA

  • 供应商器件封装:

    48-TFBGA(6x8)

  • 描述:

    IC FLASH 32MBIT PARALLEL 48TFBGA

供应商型号品牌批号封装库存备注价格
MICRON
22+
BGA
36000
代理渠道力挺长期原装现货 可开增票
询价
Numonyx-ADIVISIONOFMICRO
2022
ICFLASH32MBIT70NS48TFBGA
5058
原厂原装正品,价格超越代理
询价
Micron
17+
6200
询价
ST
2017+
BGA
12589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
NUM
92
询价
STM
16+
54860
原装现货假一罚十
询价
MICRON
1825+
BGA
6528
科恒伟业!只做原装正品假一赔十!
询价
MICRON
22+23+
BGA
24794
绝对原装正品全新进口深圳现货
询价
MicronTechnologyInc.
19+
48-TFBGA(6x8)
26580
存储IC一手货源,极具优势!
询价
MICRON/镁光
2020+
BGA
4800
绝对全新原装现货,欢迎来电查询
询价
更多M29W320DB70ZE6E供应商 更新时间2024-5-21 9:06:00