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M29DW323DB70ZE6E

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29DW323DB70ZE6E

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYXNUMONYX

恒忆

M29DW323DB70ZE6E

包装:管件 封装/外壳:48-TFBGA 类别:集成电路(IC) 存储器 描述:IC FLASH 32MBIT PARALLEL 48TFBGA

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

M29DW323DB70ZE6

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29DW323DB70ZE6

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYXNUMONYX

恒忆

M29DW323DB70ZE6F

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYXNUMONYX

恒忆

M29DW323DB70ZE6F

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29DW323DB70ZE6T

32Mbit4Mbx8or2Mbx16,DualBank8:24,BootBlock3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoits Readmode. FEATURESSUMMARY ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M29DW323DB70ZE6T

32Mbit(4Mbx8or2Mbx16,DualBank8:24,BootBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM29DW323Disa32Mbit(4Mbx8or2Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7to3.6V)supply.Onpower-upthememorydefaultstoitsReadmode. FEATURESSUMMARY ■SUPPL

NUMONYXNUMONYX

恒忆

产品属性

  • 产品编号:

    M29DW323DB70ZE6E

  • 制造商:

    Micron Technology Inc.

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    管件

  • 存储器类型:

    非易失

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    32Mb(4M x 8,2M x 16)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    70ns

  • 电压 - 供电:

    2.7V ~ 3.6V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    48-TFBGA

  • 供应商器件封装:

    48-TFBGA(6x8)

  • 描述:

    IC FLASH 32MBIT PARALLEL 48TFBGA

供应商型号品牌批号封装库存备注价格
micron(镁光)
23+
标准封装
9548
全新原装正品/价格优惠/质量保障
询价
MICRON
21+
BGA48
1950
全新原装,假一赔十!
询价
MICRON
22+
BGA48
7436
全新原装正品 现货 优势供应
询价
MICRON/美光
22+
NA
3000
支持任何机构检测 只做原装正品
询价
MICRON/美光
2021+
BGA48
9000
原装现货,随时欢迎询价
询价
Numonyx-ADIVISIONOFMICRO
2022
ICFLASH32MBIT70NS48TFBGA
5058
原厂原装正品,价格超越代理
询价
Micron
17+
6200
询价
ST
2016+
BGA48
6528
只做原厂原装现货!终端客户个别型号可以免费送样品!
询价
NUM
374
询价
ST
22+23+
TFBGA48
35445
绝对原装正品全新进口深圳现货
询价
更多M29DW323DB70ZE6E供应商 更新时间2024-6-8 22:59:00