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M28F101-120P1中文资料PDF规格书
M28F101-120P1规格书详情
DESCRIPTION
The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the
chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.
Features
• 5V±10 SUPPLY VOLTAGE
• 12V PROGRAMMING VOLTAGE
• FAST ACCESS TIME: 70ns
• BYTE PROGRAMING TIME: 10µs typical
• ELECTRICAL CHIP ERASE in 1s RANGE
• LOW POWER CONSUMPTION
– Stand-by Current: 100µA max
• 10,000 ERASE/PROGRAM CYCLES
• INTEGRATED ERASE/PROGRAM-STOP TIMER
• OTP COMPATIBLE PACKAGES and PINOUTS
• ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 07h
产品属性
- 型号:
M28F101-120P1
- 功能描述:
闪存 RO 511-M29F010B90P DIP-32 128KX8 120NS
- RoHS:
否
- 制造商:
ON Semiconductor
- 数据总线宽度:
1 bit
- 存储类型:
Flash
- 存储容量:
2 MB
- 结构:
256 K x 8
- 接口类型:
SPI
- 电源电压-最大:
3.6 V
- 电源电压-最小:
2.3 V
- 最大工作电流:
15 mA
- 工作温度:
- 40 C to + 85 C
- 安装风格:
SMD/SMT
- 封装:
Reel
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
DIP |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST/意法 |
DIP32 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
ST |
2020+ |
DIP-32 |
303 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ST/STMicroelectronics/意法半导 |
21+ |
DIP-32 |
303 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST |
DIP-32 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST/意法 |
23+ |
NA/ |
3530 |
原装现货,当天可交货,原型号开票 |
询价 | ||
ST |
22+ |
DIP |
16900 |
正规渠道,只有原装! |
询价 | ||
ST |
DIP-32 |
279100 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | |||
ST |
23+ |
标准封装 |
18000 |
询价 | |||
ST |
22+ |
DIP |
16900 |
支持样品 原装现货 提供技术支持! |
询价 |