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M25PE40VMW6TG中文资料PDF规格书

M25PE40VMW6TG
厂商型号

M25PE40VMW6TG

功能描述

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

文件大小

482.65 Kbytes

页面数量

60

生产厂商 STMicroelectronics
企业简称

STMICROELECTRONICS意法半导体

中文名称

意法半导体(ST)集团官网

原厂标识
数据手册

下载地址一下载地址二原厂数据手册到原厂下载

更新时间

2024-6-8 22:30:00

M25PE40VMW6TG规格书详情

Description

The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle.

Features

■ SPI bus compatible serial interface

■ 4 Mbit Page-Erasable Flash memory

■ Page size: 256 bytes

– Page Write in 11 ms (typical)

– Page Program in 0.8 ms (typical)

– Page Erase in 10 ms (typical)

■ SubSector Erase (4 Kbytes)

■ Sector Erase (64 Kbytes)

■ Bulk Erase (4 Mbits)

■ 2.7 V to 3.6 V single supply voltage

■ 50 MHz clock rate (maximum)

■ Deep Power-down mode 1 µA (typical)

■ Electronic Signature

– JEDEC standard two-byte signature(8013h)

■ Software Write Protection on a 64 Kbyte sector basis

■ Hardware Write Protection of the memory area selected using the BP0, BP1 and BP2 bits

■ More than 100 000 Write cycles

■ More than 20 year data retention

■ Packages

– ECOPACK® (RoHS compliant)

产品属性

  • 型号:

    M25PE40VMW6TG

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

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