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ATX-H310A

ATXIndustrialMotherboardwith8th/9thGenerationIntel®Core™Processor,DDR4DRAM,Option:4GLTEFunction

Features ■8th/9thGenerationIntel®Core™LGA1151Processor ■SupportsMax.TDP6Core95W ■DDR42666/2400/2133MHz,max.64GB ■TwoIndependentDisplays:HDMIx1,VGAx1,DPx1 ■DualIntel®GigabitEthernet,i210ATx1,i219Vx1 ■USB3.2Gen1portsx4,USB2.0portsx5 ■M.22280

AAEONAAEON Technology

研扬科技研扬科技(苏州)有限公司

AUSCD310H

SchottkyBarrierDiode

ZOWIEZOWIE

智威智威科技股份有限公司

AVN310N

Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments

ETC1List of Unclassifed Manufacturers

未分类制造商

AZT310HVI

HIGHCURRENTPHASECONTROL

POSEICO

Power Semiconductors

BFG310

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310W

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310W

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG310W/XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG310W/XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310W-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG310XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFU310

N-channelsiliconfield-effecttransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BGA310

SiliconBipolarMMIC-Amplifier(Cascadable50W-gainblock9dBtypicalgainat1.0GHz9dBmtypicalP-1dBat1.0GHz3dB-bandwidth:DCto2.4GHz)

SiliconBipolarMMIC-Amplifier Preliminarydata •Cascadable50Ω-gainblock •9dBtypicalgainat1.0GHz •9dBmtypicalP-1dBat1.0GHz •3dB-bandwidth:DCto2.4GHz

SIEMENS

Siemens Ltd

BPS310

BPS310Series-12mmUncompensatedLowPressureSensor

BournsBourns Inc.

伯恩斯(邦士)

BR310

SINGLEPHASE3.0AMPBRIDGERECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT3.0Ampere FEATURES *Idealforprintedcircuitboard *Lowleakagecurrent *Lowforwardvoltage *Mounting:Holethrufor#6screw *Mountingposition:Any *Weight:3.36grams

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

BR310

TECHNICALSPECIFICATIONSOFSINGLE-PHASESILICONBRIDGERECTIFIER

VOLTAGERANGE-50to1000VoltsCURRENT-3.0Amperes FEATURES *Surgeoverloarating:50Amperespeak *Lowforwardvoltagedrop *Smallsize:simpleinstallation

DCCOMDc Components

直流元件直流元件有限公司

BR310

SINGLE-PHASESILICONBRIDGE

Features ●Surgeoverloadrating-50amperespeak ●Lowforwardvoltagedrop ●Smallsize;simpleinstallation ●Tinnedcopperleads ●MountingPosition:Any ●Mounting:Thruholdfor#6screw

Good-Ark

Good-Ark

BR310

3.0ABRIDGERECTIFIERS

3.0ABRIDGERECTIFIERS

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

详细参数

  • 型号:

    LXT310NE

  • 制造商:

    LEVEL ONE

供应商型号品牌批号封装库存备注价格
LEVELONE
2023+
DIP-28
3385
全新原厂原装产品、公司现货销售
询价
LXT
2017+
DIP
25586
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
LEVELONE
23+
DIP-28
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
LEVELONE
23+
DIP
250
询价
LEVELON
2020+
DIP
124
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
LEVEL
22+
DIP28P
6980
原装现货,可开13%税票
询价
DIP-28
2
询价
LEVELONE
98+
DIP28
73
全新原装进口自己库存优势
询价
LEVELONE
1116
DIP
21168
绝对原装现货
询价
LXT
2020+
DIP
35000
100%进口原装正品公司现货库存
询价
更多LXT310NE供应商 更新时间2024-5-21 15:23:00