PZT882J-C

NPNSiliconMediumPowerTransistor

PZT882J-GR

3A,40VNPNSiliconMediumPowerTransistor

PZT882J-GR-C

NPNSiliconMediumPowerTransistor

PZT882J-O

3A,40VNPNSiliconMediumPowerTransistor

PZT882J-O-C

NPNSiliconMediumPowerTransistor

PZT882J-Y

3A,40VNPNSiliconMediumPowerTransistor

PZT882J-Y-C

NPNSiliconMediumPowerTransistor

S-882Z

ULTRA-LOWVOLTAGEOPERATIONCHARGEPUMPICFORSTEP-UPDC-DCCONVERTERSTARTUP

ULTRA-LOWVOLTAGEOPERATIONCHARGEPUMPICFORSTEP-UPDC-DCCONVERTERSTARTUP TheS-882ZSeriesisachargepumpICforstep-upDC-DCconverterstartup,whichdiffersfromconventionalchargepumpICs,inthatitusesfullydepletedSOI(SilicononInsulator)technologytoenableultra-lowvolta

SIE882DF

N-Channel25-V(D-S)MOSFET

SIE882DF

N-Channel25-V(D-S)MOSFET

SIE882DF

N-Channel25V(D-S)MOSFET

FEATURES •TrenchFET®GenIIIpowerMOSFET •Ultralowthermalresistanceusingtop-exposed PolarPAK®packagefordouble-sidedcooling •Leadframe-basedencapsulatedpackage -Dienotexposed -Samelayoutregardlessofdiesize,100V •LowQgd/Qgsratiohelpspreventshoot-through •

SIR882ADP

N-Channel100V(D-S)MOSFET

SIR882ADP

N-Channel100V(D-S)MOSFET

SIR882ADP

N-Channel100V(D-S)MOSFET

SIR882BDP

N-Channel100V(D-S)MOSFET

FEATURES •TrenchFET®GenIVpowerMOSFET •VerylowRDSxQgfigure-of-merit(FOM) •TunedforthelowestRDSxQossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prim

SIR882DP

N-Channel100V(D-S)MOSFET

SMBT882SS

NPNSiliconEpitaxialPlanarTransistor

SOD882

Packageoutline

STD882

NPNSiliconTransistor

Description •Suitableforlowvoltagelargecurrentdrivers •ExcellenthFELinearity •ComplementarypairwithSTB772 •SwitchingApplication Features •LowcollectorsaturationvoltageVCE(sat)=0.4V(Max.)

STD882D

NPNSiliconTransistor

Description •Suitableforlowvoltagelargecurrentdrivers •ExcellenthFELinearity •ComplementarypairwithSTB772D •SwitchingApplication Features •LowcollectorsaturationvoltageVCE(sat)=0.4V(Max.)