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LMC835N

LMC835 Digital Controlled Graphic Equalizer

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

LMC835V

LMC835DigitalControlledGraphicEqualizer

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

LSM835

8AmpSchottkyRectifier

8AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●150°CJunctionTemperature ●VRRM35to45Volts ●HighCurrentCapability

MicrosemiMicrosemi Corporation

美高森美美高森美公司

M835

M840CONNECTORHARNESSVEHICLESANDOFF-HIGHWAYMACHINERY

DSEDeep Sea Electronics

深海DSE英国深海电子有限公司

MAX835

Micropower,LatchingVoltageMonitorsinSOT23-5

GeneralDescription TheMAX834/MAX835micropowervoltagemonitorscontaina1.204Vprecisionbandgapreference,comparator,andlatchedoutputina5-pinSOT23package.Usingthelatchedoutputpreventsdeepdischargeofbatteries.TheMAX834hasanopen-drain,n-channeloutputdriver,whilethe

MaximMaxim Integrated Products

美信美信半导体

MAX835

Micropower,LatchingVoltageMonitorsinSOT23-5

MaximMaxim Integrated Products

美信美信半导体

MAX835EUK-T

Micropower,LatchingVoltageMonitorsinSOT23-5

GeneralDescription TheMAX834/MAX835micropowervoltagemonitorscontaina1.204Vprecisionbandgapreference,comparator,andlatchedoutputina5-pinSOT23package.Usingthelatchedoutputpreventsdeepdischargeofbatteries.TheMAX834hasanopen-drain,n-channeloutputdriver,whilethe

MaximMaxim Integrated Products

美信美信半导体

MAX835EUK-T

Micropower,LatchingVoltageMonitorsinSOT23-5

MaximMaxim Integrated Products

美信美信半导体

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

DIODES

Diodes Incorporated

MBR835

AxialLeadRectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−voltage,high−frequencyinvert

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBR835

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

MBR835

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

MBR835

HighTjmLowIRRMSchottkyBarrierDiodes

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835

SchottkyBarrierRectifiers

VOLTAGERANGE:30-100VCURRENT:8.0A Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Thepl

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835RL

AxialLeadRectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−voltage,high−frequencyinvert

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRB835

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,free wheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Gu

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

MBRD835

SCHOTTKYRECTIFIER

SMCSintered Metal Company

烧结金属烧结金属公司

详细参数

  • 型号:

    LMC835N

  • 制造商:

    NSC

  • 制造商全称:

    National Semiconductor

  • 功能描述:

    LMC835 Digital Controlled Graphic Equalizer

供应商型号品牌批号封装库存备注价格
NSC
1015+
DIP
5300
进口原装特价热卖中,可开17票!
询价
NS
24+
DIP
4000
原装原厂代理 可免费送样品
询价
NAT
05+
原厂原装
4253
只做全新原装真实现货供应
询价
NS
23+
DIP
9823
询价
NS
87+
DIP
1
特价热销现货库存100%原装正品欢迎来电订购!
询价
NSC
2016+
DIP28
9000
只做原装,假一罚十,公司可开17%增值税发票!
询价
DIP
380
询价
NSC
24+
DIP
6980
原装现货,可开13%税票
询价
NSC
2020+
DIP28
24
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
NSC
2021+
DIP28
7033
百分百原装正品
询价
更多LMC835N供应商 更新时间2024-9-20 10:55:00